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參數(shù)資料
| 型號： | PCF8570PN |
| 英文描述： | Serial SRAM |
| 中文描述： | 串行SRAM |
| 文件頁數(shù)： | 3/24頁 |
| 文件大?。?/td> | 179K |
| 代理商： | PCF8570PN |
1997 Feb 13
3
Philips Semiconductors
Product specification
256 to 1024
×
8-bit CMOS EEPROMs with
I
2
C-bus interface
PCF85xxC-2 family
1
FEATURES
Low power CMOS:
– maximum operating current:
2.0 mA (PCF8582C-2)
2.5 mA (PCF8594C-2)
4.0 mA (PCF8598C-2)
– maximum standby current 10
μ
A (at 6.0 V),
typical 4
μ
A
Non-volatile storage of:
– 2 kbits organized as 256
×
8-bit (PCF8582C-2)
– 4 kbits organized as 512
×
8-bit (PCF8594C-2)
– 8 kbits organized as 1024
×
8-bit (PCF8598C-2)
Single supply with full operation down to 2.5 V
On-chip voltage multiplier
Serial input/output I
2
C-bus
Write operations:
– byte write mode
– 8-byte page write mode
(minimizes total write time per byte)
Read operations:
– sequential read
– random read
Internal timer for writing (no external components)
Power-on-reset
High reliability by using a redundant storage code
Endurance: 1000000 Erase/Write (E/W) cycles at
T
amb
= 22
°
C
10 years non-volatile data retention time
Pin and address compatible to: PCF8570, PCF8571,
PCF8572 and PCF8581.
2
GENERAL DESCRIPTION
The PCF85xxC-2 is a family of floating gate Electrically
Erasable Programmable Read Only Memories
(EEPROMs) with 2, 4 and 8 kbits (256, 512 and
1024
×
8-bit). By using an internal redundant storage code
it is fault tolerant to single bit errors. This feature
dramatically increases the reliability compared to
conventional EEPROMs. Power consumption is low due to
the full CMOS technology used. The programming voltage
is generated on-chip, using a voltage multiplier.
As data bytes are received and transmitted via the serial
I
2
C-bus, a package using eight pins is sufficient. Up to
eight PCF85xxC-2 devices may be connected to the
I
2
C-bus. Chip select is accomplished by three address
inputs (A0, A1 and A2).
Timing of the E/W cycle is carried out internally, thus no
external components are required. Pin 7 (PTC) must be
connected to either V
DD
or left open-circuit. There is an
option of using an external clock for timing the length of an
E/W cycle.
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DD
I
DDR
supply voltage
supply current read
2.5
6.0
V
f
SCL
= 100 kHz
V
DD
= 2.5 V
V
DD
= 6 V
f
SCL
= 100 kHz
V
DD
= 2.5 V
V
DD
= 6 V
V
DD
= 2.5 V
V
DD
= 6 V
V
DD
= 2.5 V
V
DD
= 6 V
V
DD
= 2.5 V
V
DD
= 6 V
60
200
μ
A
μ
A
I
DDW
supply current E/W
PCF8582C-2
0.6
2.0
0.8
2.5
1.0
4.0
3.5
10
mA
mA
mA
mA
mA
mA
μ
A
μ
A
PCF8594C-2
PCF8598C-2
I
DD(stb)
standby supply current
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PCF8570T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:256 x 8-bit static low-voltage RAM with I2C-bus interface |
| PCF8570T/F5 | 制造商:NXP Semiconductors 功能描述:IC SRAM CMOS 2K SMD 8570 SOIC8 |
| PCF8570T/F5,512 | 功能描述:靜態(tài)隨機存取存儲器 256X8-BIT CMOS RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PCF8570T/F5,518 | 功能描述:靜態(tài)隨機存取存儲器 RAM 256X8 W/I2C LOW PWR -40+85 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PCF8570T/F5,518-CUT TAPE | 制造商:NXP 功能描述:PCF8570 Series 256 x 8-Bit 6 V Static Low-Voltage RAM I2C Bus Interface - SOIC-8 |
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