參數(shù)資料
型號(hào): PCF85116-3P
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): PROM
英文描述: 2048 x 8-bit CMOS EEPROM with I2C-bus interface
中文描述: 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
封裝: 0.300 INCH, PLASTIC, SOT-97-1, DIP-8
文件頁(yè)數(shù): 10/20頁(yè)
文件大?。?/td> 147K
代理商: PCF85116-3P
1997 Apr 02
10
Philips Semiconductors
Product specification
2048
×
8-bit CMOS EEPROM with I
2
C-bus
interface
PCF85116-3
9
In accordance with the Absolute Maximum Rating System (IEC 134).
LIMITING VALUES
Note
1.
ESD Human Body model Q22 at T
amb
= 22
°
C; discharge procedure according to MIL-STD-883C Method 3015.
10 CHARACTERISTICS
V
DD
= 2.7 to 5.5 V; V
SS
= 0 V; T
amb
=
40 to +85
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DD
V
I
I
I
I
O
T
stg
T
amb
V
esd
supply voltage
input voltage on any pin
input current on any pin
output current
storage temperature
operating ambient temperature
electrostatic discharge voltage
0.3
V
SS
0.8
65
40
2
+6.5
+6.5
1
10
+150
+85
V
V
mA
mA
°
C
°
C
kV
Z
i
> 500
note 1
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Supplies
V
DD
I
DDR
supply voltage
supply current read
2.7
5.5
1.0
V
mA
f
SCL
= 400 kHz;
V
DD
= 5.5 V
f
SCL
= 400 kHz;
V
DD
= 5.5 V
V
DD
= 2.7 V
V
DD
= 5.5 V
I
DDW
supply current E/W
1.0
mA
I
DD(stb)
standby supply current
6
10
μ
A
μ
A
SDA input/output (pin 5)
V
IL
V
IH
V
OL1
V
OL2
I
LO
t
o(f)
LOW level input voltage
HIGH level input voltage
LOW level output voltage
0.8
0.7V
DD
+0.3V
DD
6.5
0.4
0.6
1
V
V
V
V
μ
A
I
OL
= 3 mA; V
DD(min)
I
OL
= 6 mA; V
DD(min)
V
OH
= V
DD
note 1
output leakage current
output fall time from V
IHmin
to V
ILmax
with up to 3 mA sink current at V
OL1
with up to 6 mA sink current at V
OL2
pulse width of spikes suppressed by filter
input capacitance
20 + 0.1C
b
250
20 + 0.1C
b
250
0
ns
ns
ns
pF
t
SP
C
I
100
10
V
I
= V
SS
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