Figure 19. Example VPP
參數(shù)資料
型號: PC9RS08LE4CWL
廠商: Freescale Semiconductor
文件頁數(shù): 15/28頁
文件大?。?/td> 0K
描述: MCU 8BIT 4K FLASH W/ LCD 28-SOIC
標準包裝: 26
系列: RS08
核心處理器: RS08
芯體尺寸: 8-位
速度: 20MHz
連通性: SCI
外圍設(shè)備: LCD,LVD,POR,PWM,WDT
輸入/輸出數(shù): 26
程序存儲器容量: 4KB(4K x 8)
程序存儲器類型: 閃存
RAM 容量: 256 x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 28-SOIC(0.295",7.50mm 寬)
包裝: 托盤
MC9RS08LE4 MCU Data Sheet, Rev. 3
Flash Specifications
Freescale Semiconductor
22
Figure 19. Example VPP Filtering
3C
VPP current
Program
Mass erase
IVPP_prog
IVPP_erase
200
100
μA
4D
Supply voltage for read operation
0 < fBus < 10 MHz
VRead
1.8
5.5
V
5
P
Byte program time
tprog
20
40
μs
6
P
Mass erase time
tme
500
ms
7
C
Cumulative program HV time2
thv
——
8
ms
8C
Total cumulative HV time
(total of tme & thv applied to device)
thv_total
2
hours
9
D
HVEN to program setup time
tpgs
10
μs
10
D
PGM/MASS to HVEN setup time
tnvs
5—
μs
11
D
HVEN hold time for PGM
tnvh
5—
μs
12
D
HVEN hold time for MASS
tnvh1
100
μs
13
D
VPP to PGM/MASS setup time
tvps
20
ns
14
D
HVEN to VPP hold time
tvph
20
ns
15
D
VPP rise time3
tvrs
200
ns
16
D
Recovery time
trcv
1—
μs
17
D
Program/erase endurance
TL to TH = –40°C to 85°C
1000
cycles
18
C
Data retention
tD_ret
100
years
1 Typicals are measured at 25 °C.
2 thv is the cumulative high voltage programming time to the same row before next erase. Same address can not be
programmed more than twice before next erase.
3 Fast VPP rise time may potentially trigger the ESD protection structure, which may result in over-current flowing into the
pad and cause permanent damage to the pad. External filtering for the VPP power source is recommended. An example
VPP filter is shown in Figure 19.
Table 14. Flash Characteristics (continued)
Num
C
Characteristic
Symbol
Min
Typical1
Max
Unit
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