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MC9RS08LE4 MCU Data Sheet, Rev. 3
Flash Specifications
Freescale Semiconductor
22
Figure 19. Example VPP Filtering
3C
VPP current
Program
Mass erase
IVPP_prog
IVPP_erase
—
200
100
μA
4D
Supply voltage for read operation
0 < fBus < 10 MHz
VRead
1.8
—
5.5
V
5
P
Byte program time
tprog
20
—
40
μs
6
P
Mass erase time
tme
500
—
ms
7
C
Cumulative program HV time2
thv
——
8
ms
8C
Total cumulative HV time
(total of tme & thv applied to device)
thv_total
—
2
hours
9
D
HVEN to program setup time
tpgs
10
—
μs
10
D
PGM/MASS to HVEN setup time
tnvs
5—
—
μs
11
D
HVEN hold time for PGM
tnvh
5—
—
μs
12
D
HVEN hold time for MASS
tnvh1
100
—
μs
13
D
VPP to PGM/MASS setup time
tvps
20
—
ns
14
D
HVEN to VPP hold time
tvph
20
—
ns
15
D
VPP rise time3
tvrs
200
—
ns
16
D
Recovery time
trcv
1—
—
μs
17
D
Program/erase endurance
TL to TH = –40°C to 85°C
—
1000
—
cycles
18
C
Data retention
tD_ret
100
—
years
1 Typicals are measured at 25 °C.
2 thv is the cumulative high voltage programming time to the same row before next erase. Same address can not be
programmed more than twice before next erase.
3 Fast VPP rise time may potentially trigger the ESD protection structure, which may result in over-current flowing into the
pad and cause permanent damage to the pad. External filtering for the VPP power source is recommended. An example
Table 14. Flash Characteristics (continued)
Num
C
Characteristic
Symbol
Min
Typical1
Max
Unit