參數(shù)資料
型號： PC9RS08KA2PAE
廠商： Freescale Semiconductor
文件頁數(shù)： 61/136頁
文件大?。?/td> 0K
描述： MCU 8BIT 2KB FLASH RS08 8-DIP
標(biāo)準(zhǔn)包裝： 50
系列： RS08
核心處理器： RS08
芯體尺寸： 8-位
速度： 10MHz
外圍設(shè)備： LVD，POR，WDT
輸入/輸出數(shù)： 4
程序存儲器容量： 2KB（2K x 8）
程序存儲器類型： 閃存
RAM 容量： 63 x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 5.5 V
振蕩器型： 內(nèi)部
工作溫度： 0°C ~ 70°C
封裝/外殼： 8-DIP（0.300"，7.62mm）
包裝： 管件
配用： DEMO9RS08KA2-ND - DEMO BOARD FOR 9RS08KA2
Chapter 4 Memory
MC9RS08KA2 Series Data Sheet, Rev. 4
30
Freescale Semiconductor
Up to 1000 program/erase cycles at typical voltage and temperature
Security feature for Flash
4.6.2
Flash Programming Procedure
Programming of Flash memory is done on a row basis. A row consists of 64 consecutive bytes starting
from addresses $3X00, $3X40, $3X80, or $3XC0. Use the following procedure to program a row of Flash
memory:
1. Apply external VPP.
2. Set the PGM bit. This configures the memory for program operation and enables the latching of
address and data for programming.
3. Write any data to any Flash location, via the high page accessing window $00C0–$00FF, within
the address range of the row to be programmed. (Prior to the data writing operation, the PAGESEL
register must be configured correctly to map the high page accessing window to the corresponding
Flash row).
4. Wait for a time, tnvs.
5. Set the HVEN bit.
6. Wait for a time, tpgs.
7. Write data to the Flash location to be programmed.
8. Wait for a time, tprog.
9. Repeat steps 7 and 8 until all bytes within the row are programmed.
10. Clear the PGM bit.
11. Wait for a time, tnvh.
12. Clear the HVEN bit.
13. After time, trcv, the memory can be accessed in read mode again.
14. Remove external VPP.
This program sequence is repeated throughout the memory until all data is programmed.
NOTE
Flash memory cannot be programmed or erased by software code executed
from Flash locations. To program or erase Flash, commands must be
executed from RAM or BDC commands. User code should not enter wait or
stop during erase or program sequence.
These operations must be performed in the order shown; other unrelated
operations may occur between the steps.
4.6.3
Flash Mass Erase Operation
Use the following procedure to mass erase the entire Flash memory:
1. Apply external VPP.
2. Set the MASS bit in the Flash control register.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PC9RS08KA8CWJ 制造商:Freescale Semiconductor 功能描述:
PC9RS08LA8CFT 功能描述:8位微控制器 -MCU 8-BIT 8K FLASH W/LCD RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
PC9RS08LA8CLF 功能描述:8位微控制器 -MCU 8-BIT 8K FLASH W/LCD RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
PC9RS08LE4CWL 功能描述:8位微控制器 -MCU 8-BIT 4K FLASH W/LCD RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
PC9S08AC128CFGE 功能描述:8位微控制器 -MCU 8-Bit MCU 128K FLASH 8K RAM RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
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