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| 型號： | PC28F640J3C-125 |
| 廠商： | Intel Corp. |
| 英文描述： | Intel StrataFlash Memory (J3) |
| 中文描述： | 英特爾StrataFlash存儲器（J3） |
| 文件頁數(shù)： | 33/72頁 |
| 文件大小： | 905K |
| 代理商： | PC28F640J3C-125 |
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256-Mbit J3 (x8/x16)
Datasheet
33
9.1.1
Bus Read Operation
To perform a bus read operation, CEx (refer to
Table 13 on page 33
) and OE# must be asserted.
CEx is the device-select control; when active, it enables the flash memory device. OE# is the data-
output control; when active, the addressed flash memory data is driven onto the I/O bus. For all
read states, WE# and RP# must be de-asserted. See
Section 7.1, “Read Operations” on page 22
.
Refer to
Section 10.0, “Read Operations” on page 37
for details on reading from the flash array,
and refer to
Section 14.0, “Special Modes” on page 50
for details regarding all other available read
states.
9.1.2
Bus Write Operation
Writing commands to the Command User Interface enables various modes of operation, including
the reading of array data, CFI data, identifier codes, inspection and clearing of the Status Register,
and, when V
PEN
= V
PENH
, block erasure, program, and lock-bit configuration.
The Block Erase command requires appropriate command data and an address within the block to
be erased. The Byte/Word Program command requires the command and address of the location to
be written. Set Block Lock-Bit commands require the command and block within the device to be
locked. The Clear Block Lock-Bits command requires the command and address within the device.
The CUI does not occupy an addressable memory location. It is written when the device is enabled
and WE# is active. The address and data needed to execute a command are latched on the rising
edge of WE# or the first edge of CE0, CE1, or CE2 that disables the device (see
Table 13 on
page 33
). Standard microprocessor write timings are used.
9.1.3
Output Disable
With CEx asserted, and OE# at a logic-high level (V
IH
), the device outputs are disabled. Output
signals D[15:0] are placed in a high-impedance state.
Table 13. Chip Enable Truth Table
CE2
CE1
CE0
DEVICE
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
Enabled
Disabled
V
IL
V
IH
V
IL
Disabled
V
IL
V
IH
V
IH
V
IL
V
IH
V
IL
Disabled
Enabled
V
IH
V
IL
V
IH
Enabled
V
IH
V
IH
V
IH
V
IH
V
IL
V
IH
Enabled
Disabled
NOTE:
For single-chip applications, CE2 and CE1
can be connected to V
IL
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PC28F640J3C-150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| PC28F640J3D75 | 制造商:Intel 功能描述: |
| PC28F640J3D-75 | 制造商:Intel 功能描述:NOR Flash, 4M x 16, 64 Pin, Plastic, BGA |
| PC28F640J3D75A | 功能描述:IC FLASH 64MBIT 75NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| PC28F640J3D75B | 功能描述:IC FLASH 64MBIT 75NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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