參數(shù)資料
型號: PBYR740X
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: STATION EXTENDER-PC
中文描述: 7.5 A, 40 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, SOD-113, 2 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 41K
代理商: PBYR740X
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR745F, PBYR745X series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Isolated mounting tab
V
R
= 40 V/ 45 V
I
F(AV)
= 7.5 A
V
F
0.57 V
GENERAL DESCRIPTION
Schottkyrectifierdiodesinaplasticenvelopewithelectricallyisolatedmountingtab.Intendedforuseasoutputrectifiers
in low voltage, high frequency switched mode power supplies.
The PBYR745F series is supplied in the SOD100 package.
The PBYR745X series is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
1
cathode
2
anode
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR7
PBYR7
40F
40X
40
45F
45X
45
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
-
V
V
RWM
-
40
45
V
V
R
I
F(AV)
T
hs
103 C
square wave;
δ
= 0.5; T
hs
123 C
-
-
40
45
V
A
7.5
I
FRM
square wave;
δ
= 0.5; T
hs
123 C
-
15
A
I
FSM
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
-
100
110
A
A
I
RRM
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
- 65
175
C
k
1
a
2
1
2
case
1
2
case
July 1998
1
Rev 1.200
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