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參數(shù)資料
| 型號(hào)： | PBYR30100WT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DUAL ACCESS KVM EXTENDER |
| 中文描述： | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-247 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 31K |
| 代理商： | PBYR30100WT |
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
PBYR30100PT series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Dual, low leakage, platinum barrier
schottky rectifier diodes in a plastic
envelope
featuring
voltage drop and absence of stored
charge.Thesedevicescan withstand
reverse voltage transients and have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
low
forward
PBYR30-
60PT
60
80PT
80
100PT
100
V
RRM
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
V
V
F
I
O(AV)
0.7
30
0.7
30
0.7
30
V
A
PINNING - SOT93
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
Anode 1 (a)
2
Cathode (k)
3
Anode 2 (a)
tab
Cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-80
80
80
80
30
UNIT
-60
60
60
60
-100
100
100
100
V
RRM
V
RWM
V
R
I
O(AV)
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Output current (both diodes
conducting)
1
RMS forward current
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current per diode.
-
-
-
-
V
V
V
A
T
mb
≤
139 C
square wave;
δ
= 0.5;
T
mb
≤
124 C
I
O(RMS)
I
FRM
-
-
43
30
A
A
T
≤
124 C
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior
to surge; with reapplied
V
t = 10 ms
I
FSM
-
-
180
200
A
A
I
2
t
I
RRM
I
2
t for fusing
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
per diode.
Non-repetitive peak reverse
current per diode.
Storage temperature
Operating junction temperature
-
-
162
1
A
2
s
A
I
RSM
t
p
= 100
μ
s
-
1
A
T
stg
T
j
-65
-
175
150
C
C
1
2
3
tab
k
a1
a2
1
For output currents in excess of 20 A connection should be made to the exposed metal mounting base.
October 1994
1
Rev 1.100
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