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參數(shù)資料
| 型號(hào)： | PBYR2525CT |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | PARALLEL PRINTER CABLE W/RT-AN |
| 中文描述： | 肖特基整流二極管 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | PBYR2525CT |
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
PBYR2525CT series
Fig.1. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.2. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.3. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.4. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.5. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
0
5
10
15
20
25
0
2
4
6
8
10
12
D = 1.0
0.5
0.2
0.1
PBYR1625
Rs = 0.00875 Ohms
Vo = 0.27 V
150
147
144
141
138
135
132
IF(AV) / A
PF / W
Tmb(max) / C
T
I
D =
t
p
t
p
T
t
1
10
100
100
1000
10000
PBYR1625
VR / V
Cd / pF
0
0.2
0.4
0.6
0.8
1
0
10
20
30
40
50
PBYR1625
VF / V
IF / A
Tj = 25 C
Tj = 125 C
max
typ
10
1
0.1
0.01
10us
1ms
0.1s
10s
tp / s
Zth j-mb (K/W)
P
t
p
t
D
0
5
10
15
20
25
1uA
10uA
100uA
1mA
10mA
100mA
1A
PBYR1625
VR / V
IR / A
Tj = 25 C
50 C
75 C
100 C
125 C
150 C
January 1997
3
Rev 1.000
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