參數(shù)資料
型號: PBYR240
廠商: NXP Semiconductors N.V.
英文描述: DB25 EXT CABLE 25 FT MF
中文描述: 肖特基整流二極管
文件頁數(shù): 3/5頁
文件大?。?/td> 39K
代理商: PBYR240
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR245CT series
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.3. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.4. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.5. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.6. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.7. Transient thermal impedance; per diode;
Z
th j-sp
= f(t
p
).
0
0.5
1
1.5
0
0.2
0.4
0.6
0.8
1
D = 1.0
0.5
0.2
0.1
PBYR245CT
Rs = 0.183 Ohms
Vo = 0.27 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
D =
t
p
t
p
T
T
t
I
0
25
50
10
1
0.1
0.01
0.001
Reverse current, IR (mA)
Reverse voltage, VR (V)
50 C
75 C
100 C
125 C
PBYR245CT
Tj = 25 C
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
a = 1.57
1.9
2.2
2.8
4
PBYR245CT
Rs = 0.183 Ohms
Vo = 0.27 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
1
10
100
10
1000
100
Cd / pF
VR / V
PBYR245CT
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.5
1
1.5
2
2.5
3
PBYR245CT
Forward voltage, VF (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.01
0.1
1
10
100
PBYR245CT
pulse width, tp (s)
Transient thermal impedance, Zth j-sp (K/W)
D =
t
p
t
p
T
T
P
t
D
July 1998
3
Rev 1.400
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