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參數(shù)資料
| 型號： | PBYR2150CT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Connector assemblies, Computer cables; |
| 中文描述： | 1 A, 150 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 68K |
| 代理商： | PBYR2150CT |
1996 Oct 14
2
Philips Semiconductors
Preliminary specification
Schottky barrier double diode
PBYR2150CT
FEATURES
Low switching losses
Low forward voltage
High breakdown voltage
Fast recovery time
Guard ring protected
Plastic SMD package.
APPLICATIONS
Low power, switched-mode
power supplies
Rectification
Polarity protection.
DESCRIPTION
The PBYR2150CT is a Schottky barrier double diode, fabricated in planar
technology, and encapsulated in a SOT223 plastic SMD package.
PINNING
PIN
DESCRIPTION
1
2
3
4
anode (a
1
)
common cathode
anode (a
2
)
common cathode
4
1
2
3
Top view
MAM086
4
1
3
2
Fig.1 Simplified outline (SOT223), pin configuration and symbol.
Marking code:
BYR215.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
V
RRM
V
RWM
I
F(AV)
continuous reverse voltage
150
V
repetitive peak reverse voltage
150
V
crest working reverse voltage
150
V
average forward current
T
amb
= 85
°
C; R
th j-a
= 70 K/W;
note 1; V
R(equiv)
= 0.2 V; note 2
1
A
I
FSM
non-repetitive peak forward current t = 8.3 ms half sinewave;
JEDEC method
10
A
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