參數(shù)資料
型號: PBYR2100CT
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Connector assemblies, Computer cables;
中文描述: 1 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: PLASTIC, SMD, 4 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 47K
代理商: PBYR2100CT
1999 May 25
3
Philips Semiconductors
Product specification
Schottky barrier double diode
PBYR2100CT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
Refer to SOT223 standard mounting conditions.
For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
= 300
μ
s;
δ
= 0.02.
THERMAL CHARACTERISTICS
Note
1.
Refer to SOT223 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
V
RRM
V
RWM
I
F(AV)
continuous reverse voltage
100
V
repetitive peak reverse voltage
100
V
crest working reverse voltage
100
V
average forward current
T
amb
= 85
°
C; see Fig.2;
R
th j-a
= 70 K/W; note 1;
V
R(equiv)
= 0.2 V; note 2
t = 8.3 ms half sine wave;
JEDEC method
t
p
= 100
μ
s
1
A
I
FSM
non-repetitive peak forward current
10
A
I
RSM
T
stg
T
j
T
amb
non-repetitive peak reverse current
65
65
0.5
A
°
C
°
C
°
C
storage temperature
+150
junction temperature
+150
operating ambient temperature
85
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
forward voltage
I
F
= 1 A; note 1; see Fig.3
I
F
= 1 A; T
j
= 100
°
C; note 1; see Fig.3
V
R
= V
RRMmax
; note 1; see Fig.4
V
R
= V
RRMmax
; T
j
= 100
°
C; note 1; see Fig.4
V
R
= 4 V; f = 1 MHz; see Fig.5
790
mV
690
mV
mA
I
R
reverse current
0.5
5
mA
C
d
diode capacitance
100
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
70
K/W
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