參數(shù)資料
型號(hào): PBYR20100
廠商: NXP Semiconductors N.V.
英文描述: PARALLEL PRINTER CABLE DOT-MAT
中文描述: 肖特基整流二極管
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 46K
代理商: PBYR20100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR20100CT, PBYR20100CTB series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 60 V/ 80 V/ 100 V
I
O(AV)
= 20 A
V
F
0.7 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR20100CT series is supplied in the SOT78 conventional leaded package.
The PBYR20100CTB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
1
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
80CT
UNIT
PBYR20
PBYR20
60CT
60CTB 80CTB 100CTB
60
80
100CT
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
-
100
V
V
RWM
-
60
80
100
V
V
R
I
O(AV)
T
mb
139 C
square wave;
δ
= 0.5;
T
mb
133 C
-
-
60
80
20
100
V
A
I
FRM
square wave;
δ
= 0.5;
T
133 C
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
20
A
I
FSM
-
-
135
150
A
A
I
RRM
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
1. It is not possible to make connection to pin 2 of the SOT404 package.
- 65
175
C
k
a1
1
a2
3
2
1
3
tab
2
1 2 3
tab
November 1998
1
Rev 1.300
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PBYR20100CT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier
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