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參數(shù)資料
| 型號： | PBTR2045CTB |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | CONNECTOR |
| 中文描述： | 連接器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 42K |
| 代理商： | PBTR2045CTB |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR2045CT, PBYR2045CTB series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 40 V/ 45 V
I
O(AV)
= 20 A
V
F
≤
0.57 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR2045CT series is supplied in the SOT78 conventional leaded package.
The PBYR2045CTB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
1
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR20
PBYR20
40CT
40CTB
40
45CT
45CTB
45
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
-
V
V
RWM
-
40
45
V
V
R
I
O(AV)
T
mb
≤
106 C
square wave;
δ
= 0.5;
T
mb
≤
128 C
-
-
40
45
V
A
20
I
FRM
square wave;
δ
= 0.5;
T
≤
128 C
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
20
A
I
FSM
-
-
135
150
A
A
I
RRM
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
1
. It is not possible to make connection to pin 2 of the SOT404 pckage.
- 65
175
C
k
a1
1
a2
3
2
1
3
tab
2
1 2 3
tab
October 1998
1
Rev 1.400
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PBTR40 | 制造商:EDI 制造商全稱:Electronic devices inc. 功能描述:FAST RECOVERY MINIBRIDGE 200 NANOSECOND RECOVERY 17 AMPERE THREE-PHASE FULL-WAVE BRIDGES HEAT SINK AND CHASSIS MOUNTING |
| PBTR60 | 制造商:EDI 制造商全稱:Electronic devices inc. 功能描述:FAST RECOVERY MINIBRIDGE 200 NANOSECOND RECOVERY 17 AMPERE THREE-PHASE FULL-WAVE BRIDGES HEAT SINK AND CHASSIS MOUNTING |
| PBTR80 | 制造商:EDI 制造商全稱:Electronic devices inc. 功能描述:FAST RECOVERY MINIBRIDGE 200 NANOSECOND RECOVERY 17 AMPERE THREE-PHASE FULL-WAVE BRIDGES HEAT SINK AND CHASSIS MOUNTING |
| PBU1001 | 功能描述:橋式整流器 BRIDGE IN-LINE RECTIFIER RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| PBU1002 | 功能描述:橋式整流器 BRIDGE IN-LINE RECTIFIER RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
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