參數(shù)資料
型號(hào)： PBSS2515M,315
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
中文描述： 500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： 1.0 MM X 0.6 MM, 0.5 MM HEIGHT, PLASTIC, SC-101, 3 PIN
文件頁數(shù)： 4/9頁
文件大?。?/td> 67K
代理商： PBSS2515M,315
2003 Sep 15
4
Philips Semiconductors
Product specication
15 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2515M
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB =15V; IE =0
100
nA
VCB =15V; IE = 0; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
VEB =5V; IC =0
100
nA
hFE
DC current gain
VCE =2V; IC =10mA
200
VCE =2V; IC = 100 mA; note 1
150
VCE =2V; IC = 500 mA; note 1
90
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
25
mV
IC = 200 mA; IB = 10 mA; note 1
150
mV
IC = 500 mA; IB = 50 mA; note 1
250
mV
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
360
<500
m
VBEsat
base-emitter saturation voltage
IC = 500 mA; IB = 50 mA; note 1
1.1
V
VBEon
base-emitter turn-on voltage
VCE =2V; IC = 100 mA; note 1
0.9
V
fT
transition frequency
IC = 100 mA; VCE =5V;
f = 100 MHz
250
420
MHz
Cc
collector capacitance
VCB =10V; IE =Ie = 0; f = 1 MHz
4.4
6
pF
相關(guān)PDF資料
PDF描述
PBSS2515VPN,115 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
PBSS2515VS,115 15 V low VCEsat NPN double transistor - Complement: PBSS3515VS ; I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: 2 x NPN ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
PBSS2515YPN,115 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 430 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT363 (SC-88); Container: Tape reel smd
PBSS2540E,115 40 V, 500 mA NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd
PBSS2540M,315 40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PBSS2515MB 制造商:NXP Semiconductors 功能描述:TRANS, NPN, 15V, 0.5A, SOT883B 制造商:NXP Semiconductors 功能描述:TRANS, NPN, 15V, 0.5A, SOT883B; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:420MHz; Power Dissipation Pd:590mW; DC Collector Current:500mA; DC Current Gain hFE:90; No. of Pins:3 ;RoHS Compliant: Yes
PBSS2515MB,315 功能描述:兩極晶體管 - BJT 15V NPN 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS2515MB315 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
PBSS2515VPN 制造商:NXP Semiconductors 功能描述:TRANSISTOR SOT-666 制造商:NXP Semiconductors 功能描述:TRANSISTOR, SOT-666 制造商:NXP Semiconductors 功能描述:Dual NPN/PNP transistor,PBSS2515VPN
PBSS2515VPN T/R 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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