參數(shù)資料
型號(hào): PBSS2515F
英文描述: 15 V low VCEsat NPN transistor
中文描述: 15 V的低VCEsat NPN晶體管
文件頁數(shù): 8/8頁
文件大?。?/td> 64K
代理商: PBSS2515F
Koninklijke Philips Electronics N.V. 2001
SCA73
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http://www.semiconductors.philips.com
.
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Fax:
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Printed in The Netherlands
613514/03/pp
8
Date of release:
2001 Sep 21
Document order number:
9397 750 08429
相關(guān)PDF資料
PDF描述
PBSS2515M 15 V. 0.5 A NPN low VCEsat (BISS) transistor
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PBSS2515YPN 15 V low VCEsat NPN/PNP transistor
PBSS2540M 40 V. 0.5 A NPN low VCEsat (BISS) transistor
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PBSS2515F,115 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS2515M 制造商:NXP Semiconductors 功能描述:NPN Transistor 0.5A SOT883,PBSS2515M
PBSS2515M T/R 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS2515M,315 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS2515M3145 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: