參數(shù)資料
型號(hào): PBMB75A6
廠商: NIHON INTER ELECTRONICS CORP
元件分類: 功率晶體管
英文描述: IGBT MODULE H-Bridge 75A 600V
中文描述: 75 A, 600 V, N-CHANNEL IGBT
文件頁(yè)數(shù): 2/3頁(yè)
文件大小: 122K
代理商: PBMB75A6
PBMB75A6
0
2
4
6
8
10
0
25
50
75
100
125
150
Collector to Emitter Voltage V
CE
V)
C
Fig.1- Output Characteristics Typical)
T
C
=25
10V
9V
12V
15V
V
GE
=20V
8V
7V
0
4
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage V
GE
V)
C
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage Typical)
T
C
=25
75A
I
C
=30A
150A
0
4
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage V
GE
V)
C
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage Typical)
T
C
=125
75A
I
C
=30A
150A
0
2
4
6
8
10
12
14
16
0
75
150
225
300
0
50
100
150
200
250
300
350
400
Total Gate Charge Qg nC)
C
G
G
Fig.4- Gate Charge vs. Collector to Emitter Voltage Typical)
V
CE
=300V
200V
100V
R
L
=4
Ω
T
C
=25
0.2
0.5
1
2
5
10
20
50
100
200
50
100
200
500
1000
2000
5000
10000
20000
50000
Collector to Emitter Voltage V
CE
V)
C
Fig.5- Capacitance vs. Collector to Emitter Voltage Typical)
V
GE
=0V
f=1MH
Z
T
C
=25
Coes
Cres
Cies
0
20
40
60
80
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Collector Current I
C
A)
S
μ
s
Fig.6- Collector Current vs. Switching Time Typical)
toff
V
CC
=300V
R
G
=10
Ω
V
GE
=
±
15V
T
C
=25
ton
tr
tf
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PBMB75B12 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:IGBT MODULE H-Bridge 75A 1200V
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