參數(shù)資料
型號(hào): PBMB150B12
廠商: NIHON INTER ELECTRONICS CORP
元件分類(lèi): 功率晶體管
英文描述: IGBT MODULE H-Bridge 150A 1200V
中文描述: 150 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-14
文件頁(yè)數(shù): 3/3頁(yè)
文件大?。?/td> 127K
代理商: PBMB150B12
PBMB150B12
1
2
5
1
0
20
50
1
00
200
0.05
0.
1
0.2
0.5
1
2
5
1
0
Series Gate Impedance R
G
Ω
)
S
μ
s
Fig7- Series Gate Impedance vs Switching Time Typical)
V
CC
=600V
I
C
=
1
50A
V
GE
=
±1
5V
T
C
=25
tf
tr
ton
toff
0
1
2
3
4
0
50
1
00
1
50
200
250
300
Forward Voltage V
F
V)
F
Fig8- Forward Characteristics of Free Wheeling Diode
(Typical)
T
C
=25
T
C
=
1
25
0
1
50
300
450
600
750
900
2
5
1
0
20
50
1
00
200
500
-di/dt A/
μ
s)
P
R
Fig9- Reverse Recovery Characteristics Typical)
I
RrM
trr
I
F
=
1
50A
T
C
=25
0
400
800
1
200
1
600
0.
1
0.2
0.5
1
2
5
1
0
20
50
1
00
200
500
Collector to Emitter Voltage V
CE
V)
C
Fig.
1
0- Reverse Bias Safe Operating Area Typical)
R
G
=3.0
Ω
V
GE
=
±1
5V
T
C
≦1
25
1
0
-5
1
0
-4
1
0
-3
1
0
-2
1
0
-
1
1
1
0
1
1
x
1
0
-3
2x
1
0
-3
5x
1
0
-3
1
x
1
0
-2
2x
1
0
-2
5x
1
0
-2
1
x
1
0
-
1
2x
1
0
-
1
5x
1
0
-
1
1
Time t s)
T
(
/
Fig
11
- Transient Thermal Impedance
T
C
=25
1
Shot Pulse
FRD
IGBT
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