參數資料
型號: PBF259S
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: High Voltage Transistors
中文描述: 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁數: 1/4頁
文件大?。?/td> 133K
代理商: PBF259S
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
PBF259,S
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
300
Vdc
Collector–Base Voltage
300
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current — Continuous
500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
Watts
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
300
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 Adc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 250 Vdc, IE = 0)
ICBO
50
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc)
IEBO
20
nAdc
Collector Cutoff Current
(VCE = 10 Vdc)
ICEO
50
nAdc
1. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Order this document
by PBF259/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
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