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參數(shù)資料
| 型號： | PB51A |
| 英文描述： | Operational Amplifier |
| 中文描述： | 運算放大器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 71K |
| 代理商： | PB51A |
APEX MICROTECHNOLOGY CORPORATION
5980 NORTH SHANNON ROAD TUCSON, ARIZONA 85741 USA APPLICATIONS HOTLINE: 1 (800) 546-2739
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
PB51 PB51A
SUPPLY VOLTAGE, +V
to –V
300V
OUTPUT CURRENT, within SOA 2.0A
POWER DISSIPATION, internal at T
= 25°C
1
83W
INPUT VOLTAGE, referred to COM ±15V
TEMPERATURE, pin solder—10 sec max 220°C
TEMPERATURE, junction
1
175°C
TEMPERATURE, storage –65 to +150°C
OPERATING TEMPERATURE RANGE, case –55 to +125°C
SPECIFICATIONS
PB51
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS
2
MIN TYP MAX MIN TYP MAX UNITS
INPUT
OFFSET VOLTAGE, initial ±.75 ±1.75 * ±1.0 V
OFFSET VOLTAGE, vs. temperature Full temperature range
3
–4.5 –7 * * mV/°C
INPUT IMPEDANCE, DC 25 50 * * k
INPUT CAPACITANCE 3 * pF
CLOSED LOOP GAIN RANGE 3 10 25 * * * V/V
GAIN ACCURACY, internal Rg, Rf AV
= 3 ±10 ±15 * * %
GAIN ACCURACY, external Rf AV
= 10 ±15 ±25 * * %
PHASE SHIFT f = 10kHz, AVC
L
= 10, CC
= 22pF 10 * °
f = 200kHz, AVC
L
= 10, CC
= 22pF 60 * °
O
UTPUT
VOLTAGE SWING Io = 1.5A (PB58), 2A (PB58A) VS–11 VS
–8 VS–15 VS–11 V
VOLTAGE SWING Io = 1A VS–10 VS
–7 * * V
VOLTAGE SWING Io = .1A VS–8 VS
–5 * * V
CURRENT, continuous 1.5 2.0 A
SLEW RATE Full temperature range 50 100 75 * V/μs
CAPACITIVE LOAD Full temperature range 2200 * pF
SETTLING TIME to .1% RL
= 100, 2V step 2 * μs
POWER BANDWIDTH VC = 100 Vpp 160 320 240 * kHz
SMALL SIGNAL BANDWIDTH CC = 22pF, AV = 25, Vcc = ±100 100 * kHz
SMALL SIGNAL BANDWIDTH CC = 22pF, AV = 3, Vcc = ±30 1 * MHz
PO
WER SUPPLY
VOLTAGE, ±VS4
Full temperature range ±156 ±60 ±150 * * * V
CURRENT, quiescent VS = ±15 11 * mA
VS = ±60 12 * mA
VS = ±150 14 18 * * mA
T
HERMAL
RESISTANCE, AC junction to case5 Full temp. range, f > 60Hz 1.2 1.3 * * °C/W
RESISTANCE, DC junction to case Full temp. range, f < 60Hz 1.6 1.8 * * °C/W
RESISTANCE, junction to air Full temperature range 30 * °C/W
TEMPERATURE RANGE, case Meets full range specifications –25 25 85 * * * °C
to achieve high MTTF (Mean Time to Failure).
2. The power supply voltage specified under typical (TYP) applies, T
C
= 25°C unless otherwise noted.
3. Guaranteed by design but not tested.
4. +V
and –V
denote the positive and negative supply rail respectively.
5. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.
6. +V
S
/–V
S
must be at least 15V above/below COM.
CAUTION
NOTES: * The specification of PB51A is identical to the specification for PB51 in applicable column to the left.
1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
PB51A
The PB51 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or subject to
temperatures in excess of 850°C to avoid generating toxic fumes.
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