參數(shù)資料
型號(hào)： PA45DIE
英文描述： Operational Amplifier
中文描述： 運(yùn)算放大器
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 23K
代理商： PA45DIE
APEX MICROTECHNOLOGY CORPORATION
TELEPHONE (520) 690-8600 FAX (520) 888-3329 ORDERS (520) 690-8601 EMAIL prodlit@apexmicrotech.com
PA45DIEU REV. A FEBRUARY 1998
219
D
NO LONGER SUPPORTED FOR DESIGN
-
IN
SUPPLY VOLTAGE, +V
to –V
OUTPUT CURRENT, continuous
INPUT VOLTAGE, differential
INPUT VOLTAGE, common mode
TEMPERATURE, junction
150V
5A
±
16V
±
V
S
150
°
C
ABSOLUTE MAXIMUM RATINGS
NOTE:
Because of wafer probing test limitations, full power tests are not possible. Refer to parent
product data sheet PA45 for typical AC, DC and power performance specifications.
PARAMETER
1
TEST CONDITIONS
MIN
MAX
UNITS
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. supply
BIAS CURRENT, initial
OFFSET CURRENT, initial
SUPPLY CURRENT, quiescent
COMMON MODE REJECTION
VOLTAGE SWING, positive
VOLTAGE SWING, negative
ALARM, sink current
ALARM, leakage
V
S
=
±
20V to
±
75 V
V
S
=
±
20V
V
S
=
±
20V
V
S
=
±
20V
V
S
=
±
20V
V
CM
=
±
45V, V
S
=
±
75V
V
S
=
±
50V, I
O
= 40mA
V
S
=
±
50V, I
O
= –40mA
V
S
=
±
20V to
±
75 V
V
S
=
±
20V to
±
75 V
25
25
1
1
26
mV
μ
V/V
nA
nA
mA
dB
V
V
μ
A
μ
A
84
40
–40
90
1
DC WAFER PROBED SPECIFICATIONS
NOTES:
1. Current limit, I
Q
pin, and shutdown verified as operational.
DIE
LAYOUT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
25
24
23
22
21
20
19
18
17
220 Mil
5588μ
220 Mil
5588μ
Recommended wire is 2 mil aluminum. All large bond pads
must be used to avoid excessive current density in the die
metalization.
Pad
Function
Pad
Function
1
2
3*
4*
5
6-10
– Input
+ Input
Alarm
Shutdown
NC
–V
S
11-16
17-21
22*
23
24
25
Output Drive
+V
S
I
Compensation
Compensation
Current Limit Sense
* Pad 3 (Alarm) is tied to a switched current source. When an
over-temperature condition exits the current source turns on
and sinks 90
μ
A to –V
. Pad 4 (Shutdown) will shut off the
output stage when at least 90
μ
A is pulled from pad 4 to any
voltage at least 3 volts less positive than +V
(ground, for
example). When pad 3 is tied to pad 4 an over-temperature
condition will shut off the output stage until power is cycled
and the fault is removed. Normally pad 22 (I
) is left open.
When pad 22 is tied to pad 23 the quiescent current in the
output stage is disabled. The result is lower quiescent but
class C biasing of the output stage.
Thickness: 11 Mil (280
μ
)
Backside: Silicon (no back metal)
Small Bond pads: 5 Mil sq (127
μ
) AI
Large Bond pads: 5 x 11 Mil (127
μ
x 280
μ
) AI
NOTE:
Tie backside to –V
S
through die attach medium. Rec-
ommended die attach material is either conductive
epoxy or silver-glass. Lowest thermal resistance will
be obtained with silver-glass.
CAUTION
PA45DIE is a MOSFET amplifier. ESD handling
procedures must be observed.
HTTP://WWW.APEXMICROTECH.COM (800) 546-APEX (800) 546-2739
M I C R O T E C H N O L O G Y
HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER
PA45DIE
1998 Apex Microtechnology Corp.
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