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參數(shù)資料
| 型號(hào)： | PA28F800BV-T80 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 1M X 8 FLASH 5V PROM, 80 ns, PDSO44 |
| 封裝： | 0.525 X 1.110 INCH, PLASTIC, SOP-44 |
| 文件頁數(shù)： | 27/55頁 |
| 文件大?。?/td> | 638K |
| 代理商： | PA28F800BV-T80 |
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E
3.6.2
2-MBIT SmartVoltage BOOT BLOCK FAMILY
27
SEE NEW DESIGN RECOMMENDATIONS
V
CC
, V
PP
AND RP# TRANSITIONS
The CUI latches commands as issued by
system
software and is not altered by V
PP
or CE#
transitions or WSM actions. Its default state upon
power-up, after exit from deep power-down mode,
or after V
CC
transitions above V
LKO
(lockout
voltage), is read array mode.
After any word/byte program or block erase
operation is complete and even after V
PP
transitions
down to V
PPLK
, the CUI must be reset to read array
mode via the Read Array command if accesses to
the flash memory are desired.
Please refer to Intel’s application note
AP-617
Additional Flash Data Protection Using V
PP
, RP#,
and WP#
for a circuit-level description of how to
implement the protection discussed in Section 3.6.
3.7
Power Supply Decoupling
Flash memory’s power switching characteristics
require careful device decoupling methods. System
designers should consider three supply current
issues:
1.
Standby current levels (I
CCS
)
2.
Active current levels (I
CCR
)
3.
Transient peaks produced by falling and rising
edges of CE#.
Transient current magnitudes depend on the device
outputs’ capacitive and inductive loading. Two-line
control and proper decoupling capacitor selection
will suppress these transient voltage peaks. Each
flash device should have a 0.1 μF ceramic
capacitor connected between each V
CC
and GND,
and between its V
PP
and GND. These high-
frequency, inherently low-inductance capacitors
should be placed as close as possible to the
package leads.
3.7.1
V
TRACE ON PRINTED CIRCUIT
BOARDS
Designing for in-system programming of the flash
memory requires special consideration of the V
PP
power supply trace by the printed circuit board
designer. The V
PP
pin supplies the flash memory
cells current for programming and erasing. One
should use similar trace widths and layout
considerations given to the V
CC
power supply trace.
Adequate V
PP
supply traces, and decoupling
capacitors placed adjacent to the component, will
decrease spikes and overshoots.
NOTE:
Table headings in the DC and AC characteristics tables (i.e., BV-60, BV-80, BV-120, TBV-80, TBE-
120) refer to the specific products listed below.
See Section 5.0 for more information on product
naming and line items.
Abbreviation
Applicable Product Names
BV-60
E28F002BV-T60, E28F002BV-B60, PA28F200BV-T60, PA28F200BV-B60,
E28F200CV-T60, E28F200CV-B60, E28F200BV-T60, E28F200BV-B60
BV-80
E28F002BV-T80, E28F002BV-B80, PA28F200BV-T80, PA28F200BV-B80,
E28F200CV-T80, E28F200CV-B80, E28F200BV-T80, E28F200BV-B80
BV-120
E28F002BV-T120, E28F002BV-B120, PA28F200BV-T120, PA28F200BV-B120
TBV-80
TE28F002BV-T80, TE28F002BV-B80, TB28F200BV-T80, TB28F200BV-B80,
TE28F200CV-T80, TE28F200CV-B80, TE28F200BV-T80, TE28F200BV-B80
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PA28F800BVB120 | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F800BVT70 | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F800CV-B80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F800CV-T60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F800CV-T80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PA28F800CV-B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F800CV-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F800CV-T60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F800CV-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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