參數(shù)資料
型號(hào)： P87LPC769
廠商： NXP Semiconductors N.V.
英文描述： Low power, low price, low pin count 20 pin microcontroller with 4 kB OTP 8-bit A/D, and DAC
中文描述： 低功耗，低價(jià)格，低引腳數(shù)20 4 KB的檢察官辦公室8引腳微控制器位A / D，和DAC
文件頁數(shù)： 54/61頁
文件大?。?/td> 306K
代理商： P87LPC769
Philips Semiconductors
Preliminary specification
87LPC769
Low power, low price, low pin count (20 pin)
microcontroller with 4 kB OTP 8-bit A/D, and DAC
2001 Jan 11
51
DC ELECTRICAL CHARACTERISTICS
V
DD
= 2.7 V to 6.0 V unless otherwise specified; T
amb
= –40
°
C to +125
°
C, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
TYP
1
15
4
6
2
1
1
UNIT
MIN
MAX
25
7
10
4
10
5
I
DD
Power supply current operating
ly current, o erating
5.0 V, 20 MHz
11
3.0 V, 10 MHz
11
5.0 V, 20 MHz
11
3.0 V, 10 MHz
11
5.0 V
11
3.0 V
11
mA
mA
mA
mA
μ
A
μ
A
V
V
V
V
V
V
V
V
V
V
pF
μ
A
μ
A
μ
A
k
V
V
V
I
ID
Power supply current Idle mode
ly current, Idle mode
I
PD
Power supply current Power Down mode
ly current, Power Down mode
V
RAM
V
IL
V
IL1
V
IH
V
IH1
HYS
V
OL
V
OL1
V
OH
V
OH1
C
IO
I
IL
I
LI
I
TL
R
RST
V
BOLOW
V
BOHI
V
REF
t
C
(V
REF
)
SS
NOTES:
1. Typical ratings are not guaranteed. The values listed are at room temperature, 5 V.
2. See other Figures for details.
Active mode: I
CC(MAX)
= tbd
Idle mode: I
CC(MAX)
3. Ports in quasi-bidirectional mode with weak pull-up (applies to all port pins with pull-ups). Does not apply to open drain pins.
4. Ports in PUSH-PULL mode. Does not apply to open drain pins.
5. In all output modes except high impedance mode.
6. Port pins source a transition current when used in quasi-bidirectional mode and externally driven from 1 to 0. This current is highest when
V
IN
is approximately 2 V.
7. Measured with port in high impedance mode. Parameter is guaranteed but not tested at cold temperature.
8. Measured with port in quasi-bidirectional mode.
9. Under steady state (non-transient) conditions, I
OL
must be externally limited as follows:
Maximum I
per port pin:
20 mA
Maximum total I
OL
for all outputs:
80 mA
Maximum total I
OH
for all outputs:
5 mA
If I
OL
exceeds the test condition, V
OL
may exceed the related specification. Pins are not guaranteed to sink current greater than the listed
test conditions.
10.Pin capacitance is characterized but not tested.
11. The I
DD
, I
ID
, and I
PD
specifications are measured using an external clock with the following functions disabled: comparators, brownout
detect, and watchdog timer. For V
DD
= 3 V, LPEP = 1. Refer to the appropriate figures on the following pages for additional current drawn by
each of these functions and detailed graphs for other frequency and voltage combinations.
12.Devices initially operating at V
DD
= 2.7V or above and at f
OSC
= 10 MHz or less are guaranteed to continue to execute instructions correctly
at the brownout trip point. Initial power-on operation below V
DD
= 2.7 V is not guaranteed.
13.Devices initially operating at V
DD
= 4.0 V or above and at f
OSC
= 20 MHz or less are guaranteed to continue to execute instructions correctly
at the brownout trip point. Initial power-on operation below V
DD
= 4.0 V and F
OSC
> 10 MHz is not guaranteed.
RAM keep-alive voltage
Input low voltage (TTL input)
Negative going threshold (Schmitt input)
Input high voltage (TTL input)
Positive going threshold (Schmitt input)
Hysteresis voltage
Output low voltage all ports
5, 9
Output low voltage all ports
5, 9
Output high voltage, all ports
3
Output high voltage, all ports
4
Input/Output pin capacitance
10
Logical 0 input current, all ports
8
Input leakage current, all ports
7
Logical 1 to 0 transition current, all ports
3, 6
Internal reset pull-up resistor
Brownout trip voltage with BOV = 1
12
Brownout trip voltage with BOV = 0
Bandgap reference voltage
Bandgap temperature coefficient
Bandgap supply sensitivity
1.5
–0.5
–0.5
4.5 V < V
DD
< 5.5 V
0.2 V
DD
–0.1
0.3 V
DD
V
DD
+0.5
V
DD
+0.5
0.2 V
DD
+0.9
0.7 V
DD
0.2 V
DD
I
OL
= 3.2 mA, V
DD
= 4.5 V
I
OL
= 20 mA, V
DD
= 4.5 V
I
OH
= –30
μ
A, V
DD
= 4.5 V
I
OH
= –1.0 mA, V
DD
= 4.5 V
0.4
1.0
V
DD
–0.7
V
DD
–0.7
15
–50
±
2
–650
225
2.69
3.99
1.41
V
IN
= 0.4 V
V
IN
= V
IL
or V
IH
V
IN
= 2.0 V at V
DD
= 5.5 V
–150
40
2.35
3.45
1.11
T
amb
= –40
°
C to +85
°
C
3.8
1.26
tbd
tbd
ppm/
°
C
%/V
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