- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299586 > P6KE170C 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15 PDF資料下載
參數(shù)資料
| 型號(hào)： | P6KE170C |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15 |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | P6KE170C |
PAGE . 4
STAD-
DEC.10.2004
Fig.1 PEAK PULSE POWER RATING
PULSE TIME CURVE
Fig.2 PULSE DERATING CURVE
Fig.3 PULSE WAVEFORM
Fig.5 MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
Fig.6 STEADY STATE POWER DERATING CURVE
Fig.4 TYPICAL JUNCTION CAPACITANCE
UNIDIRECTIONAL
td,PULSE WIDTH, micro sec
T,TIME,ms
NUMBER OF CYCLES AT 60Hz
T ,AMBIENT TEMPERATURE, C
A
O
0.1
1.0
Non-Repetitve
Pulse Wavefom
Shown in Figure.3
T= 25 C
A
O
1.0
10
100
1000
10000
P
,PEAK
PULSE
FOR
W
ARD,KW
PPM
I
,PEAK
PULSE
CURRENT
,%
PPM
I
,PEAK
FOR
W
ARD
SURGE
CURRENT
,
AMPERES
FSM
PEAK
PULSE
FOR
W
ARD
(P
)
OR
CURRENT
(I
)
DERA
TING
IN
PERCENT
AGE
%
PP
100
75
50
25
0
125
150
175
200
25
50
75
100
0
1.0
2.0
3.0
4.0
0
50
100
150
10/1000 u se c Wa ve fo rm
as De fine d b ye R.E.A.
Ha lf Va lue -Ip p
2
e-kt
td
T= 25 C
Pulse Width (td) is Defined
as the Point where the Peak
Current Decayst to 50% of Ipp
A
O
tf = 10usec
Peak Value
Ippm
C
J
,C
A
P
A
C
IT
A
N
C
E
,p
F
1.0
2.0
5.0
10
20
50 100
200
Me a sure d a t
Ze ro Bia s
Me a sure d a t
Sta n d - Off
Vo lta Ge (V
)
RWM
Tj= 25 C
f= 1.0MHZ
Vsig = 50 m Vp -p
100
20
40
60
80
200
400
600
800
1,000
2,000
4,000
6,000
10
200
100
50
10
1
5
10
50
100
T= Tm a x
8.3m s Sing le Ha lf Sine -Wa ve
JEDEC M e tho d
JJ
Pm
(A
V
)S
TE
A
D
YS
TA
T
EP
O
W
E
RD
IS
S
IP
A
T
IO
N
,
W
A
TTS
T , LEAD TEMPERATURE, C
L
= 375"(9.5m m )
20mm 2 0mm 1 mm
Co pp e r He at Sinks
(0.8" 0.8" 0.40")
+
125
150
175
200
25
50
75
100
0
5.00
3.75
2.50
1.25
V(
),
BREAKDOWN VOLTGAE, volts
BR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P6KE480AT | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| P6KE530T | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| P6KE540T | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| P6KE51CABK | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15 |
| P6SMBJ51AP | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P6KE170C/23 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 170V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6KE170C/4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 170V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6KE170C/54 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 170V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6KE170CA | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 170V 600W 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6KE170CA _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。