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參數(shù)資料
| 型號(hào)： | P4SMA9.1CA/11-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封裝： | PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 66K |
| 代理商： | P4SMA9.1CA/11-E3 |
0
25
50
75
100
0
75
25
50
100
125
150
175
200
P
P
)
P
)
D
T
A
–
Ambient Temperature (
°
C)
1
5
10
50
100
t
p
–
Pulse Duration (sec)
Fig. 2
–
Pulse Derating Curve
P
P
–
P
Fig. 1
–
Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
μ
s
1.0
μ
s
10
μ
s
t
d
–
Pulse Width (sec.)
100
μ
s
1.0ms
10ms
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
T
°
C
Fig. 5
–
Typical Transient Thermal
Impedance
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25
°
C
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
I
F
–
Number of Cycles at 60 Hz
C
J
–
10
100
1,000
10,000
10
1
100
200
V
(BR)
–
Breakdown Voltage (V)
T
J
= 25
°
C
f = 1.0MHz
Vsig = 50mVp-p
Measured at
Stand-Off
Voltage, V
WM
Uni-Directional
Bi-Directional
10
50
100
200
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Fig. 4
–
Typical Junction Capacitance
1
10
100
1000
0.001
0.01
0.1
1
10
100
1000
0
50
100
150
I
P
–
P
R
Fig. 3
–
Pulse Waveform
T
= 25
°
C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
tr = 10
μ
sec.
Peak Value
I
PPM
Half Value
–
IPP
I
PPM
2
td
10/1000
μ
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t
–
Time (ms)
Ratings and
Characteristic Curves
(T
A
= 25
°
C unless otherwise noted)
P4SMA6.8A thru P4SMA220CA
Surface Mount T
RANS
Z
ORB
Transient Voltage Suppressors
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