參數(shù)資料
型號(hào)： P4C148-35LSC
廠商： PYRAMID SEMICONDUCTOR CORP
元件分類(lèi)： DRAM
英文描述： ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS
中文描述： 1K X 4 STANDARD SRAM, 25 ns, CQCC18
封裝： 0.295 X 0.335 INCH, CERAMIC, LCC-18
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 289K
代理商： P4C148-35LSC
P4C148/P4C149
Page 2 of 10
Document #
SRAM104
REV B
MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
V
CC
+0.5
V
TERM
V
T
A
Operating Temperature
–55 to +125
°C
Temperature Range
V
CC
= Max.,
CE
,
CS
= V
IH
,
V
OUT
= GND to V
CC
CE
≥
V
, V
= Max.,
f=Max., Outputs Open
CE
≥
V
, V
= Max., f= 0,
Outputs Open
V
IN
≤
0.2V or V
IN
≥
V
CC
–0.2V
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
Bias
–55 to +125
°C
T
STG
P
T
I
OUT
Storage Temperature
–65 to +150
°C
Power Dissipation
1.0
W
DC Output Current
50
mA
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
Grade
(2)
Commercial
Military
Symbol
Parameter
Conditions Typ. Unit
C
IN
C
OUT
Input Capacitance
V
IN
= 0V
5
pF
Output Capacitance V
OUT
= 0V
7
pF
Ambient Temp
0°C to 70°C
-55°C to +125°C
Gnd
0V
0V
V
CC
5.0V
± 10%
5.0V
± 10%
RECOMMENDED OPERATING
CONDITIONS
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
I
SB
I
SB1
Parameter
Output High Voltage
(TTL Load)
Output Low Voltage
(TTL Load)
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Standby Power Supply
Current (TTL Input Levels)
Standby Power Supply
Current
(CMOS Input Levels)
Test Conditions
I
OH
= –4 mA, V
CC
= Min.
V
CC
= Max., V
IN
= GND to V
CC
Unit
V
V
V
mA
mA
μA
μA
V
I
OL
= +8 mA, V
CC
= Min
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage (2)
Max.
0.4
0.8
Sym.
Min.
2.4
Max.
0.4
V
CC
+0.5
2.2
–0.5
(3)
0.8
P4C148
P4C149
Min.
2.4
2.2
V
CC
+0.5
–0.5
(3)
Mil.
Comm’l
Mil.
Comm’l
Mil.
Comm’l
Mil.
Comm’l
–10
–5
–10
–5
+10
+5
+10
+5
15
10
30
23
N/A
N/A
N/A
N/A
N/A = Not Applicable
Parameter
Commercial
Symbol
Unit
-35
-25
-20
-15
-12
130 130 120 115 100 100
mA
-10
Dynamic Operating Current
I
CC
POWER DISSIPATION CHARACTERISTICS VS. SPEED
–10
–5
+10
+5
+10
+5
–10
–5
Military
-45
95
-55
95
N/A N/A 145 135 125 120
mA
115 115
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