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參數(shù)資料
| 型號： | P4C1298-20PM |
| 廠商： | Pyramid Semiconductor Corporation |
| 英文描述： | ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| 中文描述： | 超高速64K的× 4靜態(tài)CMOS存儲器 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 135K |
| 代理商： | P4C1298-20PM |
P4C1298/L
Page 3 of 11
Document #
SRAM135
REV OR
*V
CC
= 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
CE
= V
IL
DATA RETENTION CHARACTERISTICS (P4C1298L ONLY)
Symbol
V
DR
I
CCDR
t
CDR
t
R
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
Test Conditions
CE
≥
V
CC
–0.2V,
V
IN
≥
V
–0.2V or
V
IN
≤
0.2V
Min
2.0
0
t
RC
§
Typ.*
V
=
2.0V 3.0V
10
15
Max
V
=
2.0V 3.0V
1000
2000
Unit
V
μA
ns
ns
DATA RETENTION WAVEFORM
*T
A
= +25°C
§
t
RC
= Read Cycle Time
This parameter is guaranteed but not tested.
I
CC
Symbol
Parameter
Temperature
Range
Dynamic Operating Current*
Commercial
Industrial
Military
–15
–20
–25
–35
Unit
mA
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
115
120
120
120
135
150
160
160
160
125
115
110
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P4C1298-20PMB | ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-25CI | ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-25JI | ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-25JM | ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-25JMB | ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P4C1298-20PMB | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-25CC | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-25CI | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-25CM | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-25CMB | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
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