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參數(shù)資料
| 型號(hào)： | P4C1256L55SNCLF |
| 廠(chǎng)商： | PYRAMID SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | LOW POWER 32K x 8 STATIC CMOS RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 55 ns, PDSO28 |
| 封裝： | 0.330 INCH, ROHS COMPLIANT, SOP-28 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大小： | 123K |
| 代理商： | P4C1256L55SNCLF |
P4C1256L
Page 5 of 11
Document #
SRAM121
REV E
AC CHARACTERISTICS - WRITE CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
Parameter
-55
Max
-70
Max
Unit
Min
55
Min
70
t
WC
t
CW
t
AS
t
WP
t
AH
t
DH
t
WZ
t
OW
Write Cycle Time
ns
Chip Enable Time
to End of Write
Address Valid to
End of Write
Address Set-up
Time
50
60
ns
50
60
ns
0
0
ns
Write Pulse Width
40
50
ns
Address Hold
Time
Data Valid to End
of Write
0
0
ns
25
30
ns
Data Hold Time
0
0
ns
Write Enable to
Output in High Z
25
30
ns
Output Active from
End of Write
5
5
ns
t
AW
t
DW
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (
WE
CONTROLLED)
(10,11)
Notes:
10.
CE
and
WE
must be LOW for WRITE cycle.
11.
OE
is LOW for this WRITE cycle to show t
and t
.
12. If
CE
goes HIGH simultaneously with
WE
HIGH, the output remains
in a high impedance state
13. Write Cycle Time is measured from the last valid address to the first
transitioning address.
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| P4C1256L55SNILF | LOW POWER 32K x 8 STATIC CMOS RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P4C1256L55SNILF | 制造商:PYRAMID 制造商全稱(chēng):Pyramid Semiconductor Corporation 功能描述:LOW POWER 32K x 8 STATIC CMOS RAM |
| P4C1256L70DCLF | 制造商:PYRAMID 制造商全稱(chēng):Pyramid Semiconductor Corporation 功能描述:LOW POWER 32K x 8 STATIC CMOS RAM |
| P4C1256L70DILF | 制造商:PYRAMID 制造商全稱(chēng):Pyramid Semiconductor Corporation 功能描述:LOW POWER 32K x 8 STATIC CMOS RAM |
| P4C1256L-70FMB | 制造商:Micross Components, Inc. 功能描述:STATIC RAM, 32K X 8, LOW-POWER, 70 NS ACCESS TIME - Bulk |
| P4C1256L-70L32MB | 制造商:Micross Components, Inc. 功能描述:STATIC RAM, 32K X 8, LOW-POWER - Bulk |
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