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參數(shù)資料
| 型號(hào)： | P4C1256L-20JMBLF |
| 廠商： | PYRAMID SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | HIGH SPEED 32K x 8 STATIC CMOS RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 20 ns, PDSO28 |
| 封裝： | 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOJ-28 |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 183K |
| 代理商： | P4C1256L-20JMBLF |
P4C1256
Page 3 of 17
Document #
SRAM119
REV G
*V
CC
= 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
CE
= V
IL
,
OE
= V
IH
.
I
CC
Symbol
Parameter
Temperature
Range
Commercial
Dynamic Operating Current*
Industrial
Military
N/A
N/A
–15
160
170
N/A
–12
170
–20
155
165
–25
150
160
–35
145
155
–45
N/A
150
–55
N/A
–70
N/A
Unit
N/A
mA
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
N/A
170
150
150
155
160
165
DATA RETENTION CHARACTERISTICS (P4C1256L Military Temperature Only)
Symbol
V
DR
I
CCDR
t
CDR
t
R
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
Test Conditons
CE
≥
V
CC
–0.2V,
V
IN
≥
V
CC
–0.2V
or V
IN
≤
0.2V
Min
2.0
0
t
RC
§
Typ.*
V
=
2.0V 3.0V
Max
V
=
2.0V 3.0V
Unit
10
15
100
200
V
μA
ns
ns
*T
A
= +25°C
§t
RC
= Read Cycle Time
This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P4C1256L-20PMBLF | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 32K x 8 STATIC CMOS RAM |
| P4C1256L-20SMBLF | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 32K x 8 STATIC CMOS RAM |
| P4C1256L-20TMBLF | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 32K x 8 STATIC CMOS RAM |
| P4C1256L-25CMBLF | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 32K x 8 STATIC CMOS RAM |
| P4C1256L-25DMBLF | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 32K x 8 STATIC CMOS RAM |
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