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參數(shù)資料
| 型號(hào)： | P4C116-10CM |
| 廠商： | Pyramid Semiconductor Corporation |
| 英文描述： | ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS |
| 中文描述： | 超高速2K × 8靜態(tài)CMOS五羊 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大小： | 251K |
| 代理商： | P4C116-10CM |
P4C116/P4C116L
Page 2 of 14
Document #
SRAM110
REV A
MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
V
CC
+0.5
V
TERM
V
T
A
Operating Temperature
–55 to +125
°C
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
Bias
–55 to +125
°C
T
STG
P
T
I
OUT
Storage Temperature
–65 to +150
°C
Power Dissipation
1.0
W
DC Output Current
50
mA
Symbol
Parameter
Conditions Typ. Unit
C
IN
C
OUT
Input Capacitance
V
IN
= 0V
5
pF
Output Capacitance V
OUT
= 0V
pF
Grade
(2)
Ambient Temp
Gnd
Vcc
Commercial
0°C to 70°C
0V
5.0V ±10%
Military
-55°C to +125°C
0V
5.0V ±10%
RECOMMENDED OPERATING CONDITIONS
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
I
SB
Standby Power Supply
Current (TTL Input Levels)
CE
≥
V
IH,
Mil.
V
CC
= Max, Ind./Com’l.
f = Max., Outputs Open
___
___
30
20
___
___
___
___
15
10
20
n/a
1
n/a
mA
mA
___
___
CE
≥
V
HC
, Mil.
V
CC
= Max, Ind./Com’l.
f = 0, Outputs Open
V
IN
≤
V
LC
or V
IN
≥
V
HC
Standby Power Supply
Current
(CMOS Input Levels)
I
SB1
Symbol
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OH
I
LI
I
LO
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output High Voltage
(TTL Load)
Input Leakage Current
Output Leakage Current
Test Conditions
V
CC
= Min., I
IN
= –18 mA
I
OL
= +8 mA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
V
CC
= Max. Mil.
V
IN
= GND to V
CC
Com’l.
V
CC
= Max.,
CE
= V
IH
, Mil.
V
OUT
= GND to V
CC
Com’l.
P4C116
Min
2.2
–0.5
(3)
V
CC
–0.2
–0.5
(3)
2.4
–10
–5
–10
–5
Max
V
CC
+0.5
0.8
V
CC
+0.5
0.2
–1.2
0.4
+10
+5
+10
+5
P4C116L
Min
2.2
Max
V
CC
+0.5
–0.5
(3)
V
CC
–0.2
–0.5
(3)
2.4
–5
n/a
–5
n/a
0.8
V
CC
+0.5
0.2
0.4
–1.2
+5
n/a
+5
n/a
Unit
V
V
V
V
V
V
V
μA
μA
n/a = Not Applicable
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P4C116-10CMB | ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS |
| P4C116-10FSC | ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS |
| P4C116-10FSM | ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS |
| P4C116-10FSMB | ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS |
| P4C116-10JM | ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P4C116-10CMB | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS |
| P4C116-10FSC | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS |
| P4C116-10FSM | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS |
| P4C116-10FSMB | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS |
| P4C116-10JC | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS |
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