參數(shù)資料
型號: P4C1049L-20FS36MB
廠商: PYRAMID SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: HIGH SPEED 512K x 8 STATIC CMOS RAM
中文描述: 512K X 8 STANDARD SRAM, 20 ns, PDFP36
封裝: DFP-36
文件頁數(shù): 8/12頁
文件大?。?/td> 222K
代理商: P4C1049L-20FS36MB
P4C1049
Page 8 of 12
Document #
SRAM128
REV OR
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Times
3ns
Input Timing Reference Level
1.5V
Output Timing Reference Level
1.5V
Output Load
See Figures 1 and 2
AC TEST CONDITIONS
Figure 1. Output Load
Figure 2. Thevenin Equivalent
* including scope and test fixture.
Note:
Because of the ultra-high speed of the P4C1049, care must be taken
when testing this device; an inadequate setup can cause a normal
functioning part to be rejected as faulty. Long high-inductance leads
that cause supply bounce must be avoided by bringing the V
and
ground planes directly up to the contactor fingers. A 0.01 μF high
frequency capacitor is also required between V
CC
and ground. To avoid
signal reflections, proper termination must be used; for example, a 50
test environment should be terminated into a 50
load with 1.73V
(Thevenin Voltage) at the comparator input, and a 116
resistor must
be used in series with D
OUT
to match 166
(Thevenin Resistance).
Write
Active
Read
TRUTH TABLE
Mode
Standby
Standby
D
OUT
Disabled
Standby
Standby
Power
I/O
WE
X
X
OE
X
X
CE
H
X
High Z
High Z
D
OUT
High Z
H
H
L
H
L
X
L
L
L
Active
Active
High Z
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相關(guān)代理商/技術(shù)參數(shù)
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P4C1049L-25L36MB 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 512K x 8 STATIC CMOS RAM