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參數(shù)資料
| 型號(hào)： | P4C1048L-70SMB |
| 廠商： | Pyramid Semiconductor Corporation |
| 英文描述： | LOW POWER 512K x 8 CMOS STATIC RAM |
| 中文描述： | 低功率為512k × 8的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | P4C1048L-70SMB |
P4C1048L
Page 2 of 12
Document #
SRAM129
REV D
RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE
MAXIMUM RATINGS
(a)
Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings
only. Functional operation of the device is not implied at these or any other conditions in excess of those given in
the operational sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely
affect device reliability.
Temperature Range (Ambient)
Supply Voltage
4.5V
≤
V
CC
≤
5.5V
4.5V
≤
V
CC
≤
5.5V
4.5V
≤
V
CC
≤
5.5V
Industrial (-40°C to 85°C)
Military (-55°C to 125°C)
Commercial (0°C to 70°C)
Symbol
Parameter
Min
Max
Unit
V
CC
V
TERM
Supply Voltage with Respect to GND
-0.5
7.0
V
Terminal Voltage with Respect to GND (up to 7.0V)
-0.5
V
CC
+ 0.5
V
T
A
Operating Ambient Temperature
-55
125
°C
S
TG
-65
150
°C
I
OUT
Output Current into Low Outputs
25
mA
I
LAT
Latch-up Current
>200
mA
Storage Temperature
CAPACITANCES
(d)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0 MHz)
Symbol
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Parameter
Test Conditions
Max
Unit
C
IN
C
OUT
Input Capacitance
Output Capacitance
V
IN
= 0V
V
OUT
= 0V
6
8
pF
pF
Symbol
Parameter
Unit
I
CC
Dynamic Operating Current
Commercial
Industrial
Military
20
25
35
20
25
35
mA
-70
-100
Temperature Range
*
*
Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e.
CE
and
WE
≤
V
IL
(max),
OE
is high. Switching
inputs are 0V and 3V.
Notes:
a. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability.
b. Extended temperature operation guaranteed with 400 linear feet per minute of air flow.
c. Transient inputs with V
and I
not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
d. This parameter is sampled and not 100% tested.
20
25
35
20
25
35
-45
-55
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P4C1048L-70TC | LOW POWER 512K x 8 CMOS STATIC RAM |
| P4C1048L-70TI | LOW POWER 512K x 8 CMOS STATIC RAM |
| P4C1048L-70TM | LOW POWER 512K x 8 CMOS STATIC RAM |
| P4C1048L-70TMB | LOW POWER 512K x 8 CMOS STATIC RAM |
| P4C1049-20L36M | HIGH SPEED 512K x 8 STATIC CMOS RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P4C1048L-70TC | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:LOW POWER 512K x 8 CMOS STATIC RAM |
| P4C1048L-70TI | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:LOW POWER 512K x 8 CMOS STATIC RAM |
| P4C1048L-70TM | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:LOW POWER 512K x 8 CMOS STATIC RAM |
| P4C1048L-70TMB | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:LOW POWER 512K x 8 CMOS STATIC RAM |
| P4C1049 | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 512K x 8 STATIC CMOS RAM |
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