參數(shù)資料
型號: P4C1048L-70PMB
廠商: Pyramid Semiconductor Corporation
英文描述: LOW POWER 512K x 8 CMOS STATIC RAM
中文描述: 低功率為512k × 8的CMOS靜態(tài)RAM
文件頁數(shù): 3/12頁
文件大?。?/td> 168K
代理商: P4C1048L-70PMB
P4C1048L
Page 3 of 12
Document #
SRAM129
REV D
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)
(b)
I
SB
Standby Power Supply
Current (TTL Input Levels)
CE
V
IH
Mil.
V
CC
= Max, Ind./Com’l.
f = Max., Outputs Open
CE
V
HC
Mil.
V
CC
= Max, Ind./Com’l.
f = 0, Outputs Open
V
IN
V
LC
or V
IN
V
HC
Standby Power Supply
Current
(CMOS Input Levels)
I
SB1
Symbol
V
IH
V
IL
V
HC
V
LC
V
OL
I
LI
I
LO
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Leakage Current
Test Conditions
V
CC
= Max. Mil.
V
IN
= GND to V
CC
Ind./Com’l.
V
CC
= Max., Mil.
CE
= V
IH
, Ind./Com’l.
V
OUT
= GND to V
CC
Unit
V
V
V
V
μA
μA
mA
μA
Output Low Voltage
(TTL Load)
I
OL
= +2.1 mA, V
CC
= Min.
V
Output High Voltage
(TTL Load)
V
OH
I
OH
= –1 mA, V
CC
= Min.
V
Output Leakage Current
P4C1048L
Min
2.2
___
___
5
3
100
30
___
___
–0.5
(c)
V
CC
–0.2
–0.5
(c)
–10
–5
–10
–5
Max
V
CC
+0.5
0.8
V
CC
+0.5
0.2
+10
+5
+10
+5
0.4
2.4
N/A = Not Applicable
相關(guān)PDF資料
PDF描述
P4C1048L-70SC LOW POWER 512K x 8 CMOS STATIC RAM
P4C1048L-70SI LOW POWER 512K x 8 CMOS STATIC RAM
P4C1048L-70SM LOW POWER 512K x 8 CMOS STATIC RAM
P4C1048L-70SMB LOW POWER 512K x 8 CMOS STATIC RAM
P4C1048L-70TC LOW POWER 512K x 8 CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P4C1048L-70SC 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:LOW POWER 512K x 8 CMOS STATIC RAM
P4C1048L-70SI 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:LOW POWER 512K x 8 CMOS STATIC RAM
P4C1048L-70SM 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:LOW POWER 512K x 8 CMOS STATIC RAM
P4C1048L-70SMB 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:LOW POWER 512K x 8 CMOS STATIC RAM
P4C1048L-70TC 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:LOW POWER 512K x 8 CMOS STATIC RAM