參數(shù)資料
P4C1048L
Page 8 of 12
Document #
SRAM129
REV D
DATA RETENTION
1.
CE
1
V
DR
-0.2V, CE
2
V
DR
-0.2V or CE
2
0.2V; or
CE
1
0.2V, CE
2
- 0.2V; V
IN
V
DR
-0.2V or V
IN
0.2V
LOW V
CC
DATA RETENTION WAVEFORM
Symbol
Parameter
Test Conditions
Unit
V
DR
I
CCDR
V
CC
for Data Retention
Data Retention Current
CE
V
CC
-0.2V,
V
IN
V
CC
-0.2V or V
IN
0.2V
V
V
DR
= 2.0V
V
DR
= 3.0V
μA
μA
t
R
Operating Recovery Time
Chip Deselect to Data
Retention Time
See Retention Waveform
ns
ns
t
CDR
Max
Min
2.0
5.5
20
200
t
RC
0
30
300
Comm/Ind
Military
Comm/Ind
Military
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P4C1048L-45CWI 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:LOW POWER 512K x 8 CMOS STATIC RAM
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P4C1048L-45CWMB 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:LOW POWER 512K x 8 CMOS STATIC RAM
P4C1048L-45PC 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:LOW POWER 512K x 8 CMOS STATIC RAM
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