參數(shù)資料
型號: P4C1041-20JI
廠商: PYRAMID SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
中文描述: 256K X 16 STANDARD SRAM, 20 ns, PDSO44
封裝: 0.400 INCH, PLASTIC, SOJ-44
文件頁數(shù): 5/10頁
文件大?。?/td> 453K
代理商: P4C1041-20JI
P4C1041
Page 5 of 10
Document #
SRAM133
REV OR
-10
AC CHARACTERISTICS—WRITE CYCLE
(V
CC
= 3.3V ± 0.3V, All Temperature Ranges)
(2)
Sym.
t
WC
t
CW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
Parameter
Write Cycle Time
Chip Enable Time to End of
Write
Address Set-up Time to Write
Start
Write Pulse Width
Address Hold Time
Data Hold Time
Data Valid to End of Write
Max
Min
Max
Min
Max
Min
Max
Min
-12
-15
-20
Unit
10
0
7
0
12
0
8
0
15
0
10
0
20
0
10
0
7
7
0
5
8
8
0
6
10
10
0
7
10
10
0
8
ns
ns
ns
ns
ns
ns
ns
ns
t
AW
Address Valid to End of Write
Write Enable to Output in High Z
5
6
7
8
ns
Output Active from End of Write
t
OW
5
5
0
0
ns
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (
CE
CONTROLLED)
WE
High to Low Z
t
LZWE
3
3
3
3
ns
Byte Enable to End of Write
t
BW
7
8
10
10
ns
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