參數(shù)資料
型號(hào): P3324
英文描述: 44 PIN, 48 KB ENH FLASH, 3804 RAM, 36 I/O, -40C to +85C, 44-QFN , T/R
中文描述: 變壓器V.22BIS
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 119K
代理商: P3324
P3324
ETALDOC 597/4
Page 2 of 5
September 2000
SPECIFICATIONS
Electrical
At T = 25
O
C and as circuit Fig. 2 unless otherwise stated.
Parameter
Conditions
Min
Typ
Max
Units
Insertion Loss
f = 2kHz, R
L
= 600
-
1.8
-
dB
Frequency Response
LF -3dB cutoff
HF -3dB cutoff
200Hz – 4kHz
-
-
-
30
55
-
-
-
±
0.1
Hz
kHz
dB
Return Loss
(5)
200Hz – 4kHz
16
-
-
dB
Transhybrid Loss
(5)
200Hz – 4kHz
20
-
-
dB
Third Harmonic
Distortion
(1)
450Hz -10dBm in line
200Hz -10dBm in line
-
-
-86
-79
-
-
dBm
dBm
Voltage Isolation
(2)
50Hz
DC
2.12
3.0
-
-
-
-
kVrms
kV
Operating Range:
Functional
Storage
0
-40
-
-
+70
+85
O
C
O
C
Lumped equivalent circuit parameters as Fig. 1
DC resistance
(3)
Primary resistance R
DCp
Secondary resistance R
DCs
70
95
-
-
87
120
Leakage inductance,
L
3
3.8
5
mH
Shunt inductance, Lp
(4)
200Hz -43dBm
3
4
-
H
Shunt loss, Rp
200Hz -43dBm
6
8
-
k
Notes:
1. Third
harmonics by 10dB.
2. Components are 100% tested at 3.25kVDC.
3. Caution: do not pass DC through windings.
Telephone line current must be diverted using
semiconductor line hold circuit or choke.
4. At signal levels greater than –20dBm, Lp will
increase and Rp will decrease slightly but the
effect is usually favourable to the return loss
characteristic.
5. Return loss and transhybrid loss can be
improved to 30dB in improved matching circuit.
The values shown relate to the simplest
configuration, Fig. 2.
harmonic
typically
exceeds
other
Equivalent Circuit
Fig. 1
IDEAL
1:1
L
L
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