參數(shù)資料
型號: P312XDP512F0MFUR
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: Covers, S12XD, S12XB & S12XA Families
中文描述: 封面,S12XD,S12XB
文件頁數(shù): 1140/1350頁
文件大小: 3951K
代理商: P312XDP512F0MFUR
Chapter 27 512 Kbyte Flash Module (S12XFTX512K4V2)
MC9S12XDP512 Data Sheet, Rev. 2.17
1140
Freescale Semiconductor
27.4.2.5
Mass Erase Command
The mass erase operation will erase all addresses in a Flash block using an embedded algorithm.
An example flow to execute the mass erase operation is shown in
Figure 27-30
. The mass erase command
write sequence is as follows:
1. Write to a Flash block address to start the command write sequence for the mass erase command.
The address and data written will be ignored. Multiple Flash blocks can be simultaneously mass
erased by writing to the same relative address in each Flash block.
2. Write the mass erase command, 0x41, to the FCMD register.
3. Clear the CBEIF flag in the FSTAT register by writing a 1 to CBEIF to launch the mass erase
command.
If a Flash block to be erased contains any protected area, the PVIOL flag in the FSTAT register will set and
the mass erase command will not launch. Once the mass erase command has successfully launched, the
CCIF flag in the FSTAT register will set after the mass erase operation has completed unless a new
command write sequence has been buffered.
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