參數(shù)資料
型號: P2V28S40ATP-8
廠商: Vanguard International Semiconductor Corporation
英文描述: 128Mb SDRAM Specification
中文描述: 128Mb的SDRAM內(nèi)存規(guī)格
文件頁數(shù): 16/51頁
文件大?。?/td> 652K
代理商: P2V28S40ATP-8
JULY.2000
Rev.2.2
128Mb Synchronous DRAM
P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT)
P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT)
P2V28S40ATP-7,-75,-8 (4-BANK x 2,097,152-WORD x 16-BIT)
Page-15
MODE REGISTER
Burst Length, Burst Type and /CAS Latency can be pro-
grammed by setting the mode register (MRS). The mode
register stores these data until the next MRS command,
which may be issued when all banks are in idle state. After
tRSC from a MRS command, the SDRAM is ready for new
command.
R: Reserved for Future Use
BL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
BURST
LENGTH
BT= 0
1
2
4
8
R
R
R
FP
BT= 1
1
2
4
8
R
R
R
R
0
1
BURST
TYPE
SEQUENTIAL
INTERLEAVED
A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA1
BA0
0
0
0
0
0
LTMODE
BT
BL
0
0
CL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
LATENCY
MODE
/CAS LATENCY
2
3
R
R
R
R
R
R
/CS
/RAS
/CAS
/WE
BA0,1 A11-A0
CLK
V
FP: Full Page
POWER ON SEQUENCE
Before starting normal operation, the following power on
sequence is necessary to prevent a SDRAM from damaged
or malfunctioning.
1. Apply power and start clock. Attempt to maintain CKE
high, DQM high and NOP condition at the inputs.
2. Maintain stable power, stable clock, and NOP input con-
ditions for a minimum of 200μs.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 8 or
more auto-refresh commands.
5. Issue a mode register set command to initialize the mode
register.
After these sequence, the SDRAM is idle state and ready
for normal operation.
相關(guān)PDF資料
PDF描述
P2V28S20ATP-75 128Mb SDRAM Specification
P2V28S20ATP-8 128Mb SDRAM Specification
P2V28S20DTP-7 128Mb SDRAM Specification
P2V28S30ATP-7 128Mb SDRAM Specification
P2V28S30ATP-75 128Mb SDRAM Specification
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