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參數(shù)資料
| 型號(hào)： | P2N2369 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | NPN SILICON HIGH SPEED SWITHCHING TRANSISTORS |
| 中文描述： | NPN硅三極管高速SWITHCHING |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 220K |
| 代理商： | P2N2369 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS
P2N2369
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
MIN
15
40
40
4.5
MAX
Collector Emitter Breakdown Voltage
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Leakage Current
Collector Leakage Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
BV
CEO
BV
CES
BV
CBO
BV
EBO
I
CBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
I
C
=10mA, I
B
=0
I
C
=10
μ
A, V
BE
=0
I
C
=10
μ
A, I
E
=0
I
E
=10
μ
A, I
C
=0
V
CB
=20V, I
E
=0
V
CB
=20V, Ta=125oC
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, V
CE
=1V
I
C
=100mA, V
CE
=2V*
I
C
=10mA, V
CE
=1V,
Ta= -55oC
V
V
V
V
nA
μ
A
V
V
400
30
0.25
0.85
120
0.7
40
20
20
DYNAMIC CHARACTERISTICS
Output Capacitance
C
c
I
E
=0, V
CB
=5V
f=140KHz
4
pF
Small Signal Current Gain
| h
fe
|
V
CE
=10V,I
C
=10mA
f=100MH
Z
5
MHz
SWITCHING CHARCTERISTICS
Turn on Time
t
on
I
C
=10mA, I
B1
=3mA,
V
CC
=3V
12
ns
Turn off Time
t
off
I
C
=10mA, I
B1
=3mA,
V
CC
=3V,I
B2
=1.5mA
18
ns
Storage Time
t
s
I
C
=10mA, I
B1
=10mA= I
B2
13
ns
*Pulse Condition: Length < 300
m
s, Duty Cycle < 2%.
VALUE
UNIT
TEST CONDITION
SYMBOL
DESCRIPTION
CBE
Continental Device India Limited
Data Sheet
Page 2 of 4
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|---|---|
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