參數(shù)資料
型號(hào): P28F020-120
廠商: INTEL CORP
元件分類(lèi): PROM
英文描述: 28F020 2048K (256K X 8) CMOS FLASH MEMORY
中文描述: 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
封裝: 0.620 X 1.640 INCH, PLASTIC, DIP-32
文件頁(yè)數(shù): 28/38頁(yè)
文件大小: 878K
代理商: P28F020-120
28F020
E
28
4.8
AC Characteristics
—Read Only Operations—Commercial and Extended
Temperature Products
Versions
28F020-90
(4)
28F020-120
(4)
28F020-150
(4)
Symbol
Characteristics
Notes
Min
Max
Min
Max
Min
Max
Unit
t
AVAV
/t
RC
Read Cycle Time
90
120
150
ns
t
ELQV
/
t
CE
>
Chip Enable Access
Time
90
120
150
ns
t
AVQV
/
t
ACC
Address Access
Time
90
120
150
ns
t
GLQV
/
t
OE
Output Enable
Access Time
35
50
50
ns
t
ELQ
X
/
t
LZ
Chip Enable to
Output in Low Z
2, 3
0
0
0
ns
t
EHQZ
Chip Disable to
Output in High Z
2
45
55
55
ns
t
GLQX
/
t
OLZ
Output Enable to
Output in Low Z
2, 3
0
0
0
ns
t
GHQZ
/
t
DF
Output Disable to
Output in High Z
2
30
30
30
ns
t
OH
Output Hold from
Address, CE#, or
OE# Change
1, 2
0
0
0
ns
t
WHGL
Write Recovery Time
before Read
6
6
6
μs
NOTES:
1.
2.
3.
4.
Whichever occurs first.
Sampled, not 100% tested.
Guaranteed by design.
See High Speed AC Testing Input/Output Waveform(Figure 8) and High Speed AC Testing Load Circuit(Figure 9) for
testing characteristics.
See Testing Input/Output Waveform(Figure 6) and AC Testing Load Circuit(Figure 7) for testing characteristics.
5.
相關(guān)PDF資料
PDF描述
P28F020-150 28F020 2048K (256K X 8) CMOS FLASH MEMORY
P28F256A-120 x8 Flash EEPROM
D28F256-170P1C2 x8 Flash EEPROM
D28F256-200P1C2 x8 Flash EEPROM
D28F256-250P1C2 x8 Flash EEPROM
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