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| 型號(hào)： | P2504BDG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor ( Preliminary ) |
| 中文描述： | N溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管（初步） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | P2504BDG |
1
JAN-17-2005
N-Channel Logic Level Enhancement
Mode Field Effect Transistor ( Preliminary )
P2504BDG
TO-252 (DPAK)
Lead-Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
±20
V
T
C
= 25 °C
12
Continuous Drain Current
T
C
= 100 °C
I
D
10
Pulsed Drain Current
1
I
DM
45
A
T
C
= 25 °C
41
Power Dissipation
T
C
= 100 °C
P
D
32
W
Operating Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
Lead Temperature (
1
/
16
” from case for 10 sec.)
T
L
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
R
θ
J
c
3
°C / W
Junction-to-Ambient
R
θ
JA
75
°C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
≤
1
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
μ
A
40
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1
2.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
±250
nA
V
DS
= 32V, V
GS
= 0V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V, T
C
= 125 °C
10
μ
A
On-State Drain Current
1
I
D(ON)
V
DS
= 10V, V
GS
= 10V
45
A
V
GS
= 4.5V, I
D
= 10A
35
45
Drain-Source On-State Resistance
1
R
DS(ON)
V
GS
= 10V, I
D
= 12A
21
25
m
1. GATE
2. DRAIN
3. SOURCE
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
40V
25m
12A
G
D
S
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