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參數(shù)資料
| 型號： | P2103HVG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 363K |
| 代理商： | P2103HVG |
2
Jun-29-2004
Dual N-Channel Enhancement Mode
Field Effect Transistor
P2103HVG
SOP-8
Lead-Free
NIKO-SEM
On-State Drain Current
1
I
D(ON)
V
DS
= 5V, V
GS
= 10V
25
A
V
GS
= 4.5V, I
D
= 6A
21
35
Drain-Source On-State
Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 7A
15
21
m
Ω
Forward Transconductance
1
g
fs
V
DS
= 15V, I
D
= 5A
24
S
DYNAMIC
Input Capacitance
C
iss
1650
Output Capacitance
C
oss
365
Reverse Transfer Capacitance
C
rss
V
GS
= 0V, V
DS
= 15V, f = 1MHz
170
pF
Total Gate Charge
2
Q
g
18
25
Gate-Source Charge
2
Q
gs
5.5
Gate-Drain Charge
2
Q
gd
V
DS
= 0.5V
(BR)DSS
, V
GS
= 5V,
I
D
= 7A
6.7
nC
Turn-On Delay Time
2
t
d(on)
11
20
Rise Time
2
t
r
V
DS
= 15V
9
18
Turn-Off Delay Time
2
t
d(off)
I
D
1A, V
GS
= 10V, R
GEN
= 6
Ω
25
40
Fall Time
2
t
f
11
20
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25
°
C)
Continuous Current
I
S
1.3
Pulsed Current
3
I
SM
2.5
A
Forward Voltage
1
V
SD
I
F
= 1A, V
GS
= 0V
1.2
V
Reverse Recovery Time
t
rr
I
F
= 5A, dl
F
/dt = 100A /
μ
S
15.5
nS
Reverse Recovery Charge
Q
rr
7.9
1
Pulse test : Pulse Width
≤
300
μ
sec, Duty Cycle
≤
2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P2103HVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
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