參數(shù)資料
型號： P1Z9ADR900V
廠商： Powerex Power Semiconductors
英文描述： Phase Control Modules (345-800 Amperes/400-3000 Volts)
中文描述： 相位控制模塊（345-800 Amperes/400-3000伏特）
文件頁數(shù)： 4/6頁
文件大?。?/td> 130K
代理商： P1Z9ADR900V
P-4
Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272
POW-R-BRIK
Phase Control Modules
345-800 Amperes/400-3000 Volts
Maximum Ratings and Electrical Characteristics
P1Z7AAR700W_ _
P1Z7ABR700W_ _
P1Z9AAR900W_ _
P1Z9ACR900W_ _
P1Z9ADR900V_ _
3000
2200
3000
1200
600
3000
2500
3000
2500
2500
1.10
0.92
1.70
1.50
1.50
1.00
1.00
1.15
1.15
1.15
3000
2200
3000
1200
600
3100
2300
3100
1300
700
3100
2300
3100
1300
700
300
300
300
300
300
50
50
150
150
150
50
50
150
150
150
7
9
16
30
50
7
9
16
30
50
15
10
20
15
10
—
—
—
—
—
Voltage Gate Current, Speed of Element*
Gate
Voltage
Current
Speed
Isolation
Voltage**
Strike
Distance
Terminals
to
Case
(In.)
V
DRM
/V
RRM
E1
(V)
Part Number
E2
(V)
I
DRM
/I
RRM
E1
(mA)
E2
(mA)
I
TSM
/I
FSM
E1
(kA)
E2
(kA)
V
(V)
I
(mA)
SCR
t
q
(
μ
s)
Diode
t
rr
(
μ
s)
V
RSM
E1
(V)
E2
(V)
dv/dt
(V/
μ
s)
V
GT
(V)
I
(mA)
di/dt
(A/
μ
s)
Diode/Diode
2200
1600
3000
2000
1600
2500
2500
3000
2500
2500
0.92
0.92
1.70
1.50
1.50
1.00
1.00
1.15
1.15
1.15
2200
1600
3000
2000
1600
2300
1700
3100
2100
1700
2300
1700
3100
2100
1700
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
150
150
200
200
200
600
600
600
600
600
30
30
150
75
75
30
30
150
75
75
9
10
15
17
25
9
14
16
16
16
150
150
400
250
150
10
8
20
20
20
3
3
3
3
3
Half Control SCR/Rectifier
P2Z7ABB700W_ _
P2Z7ACB700W_ _
P2Z9AAA900W_ _
P2Z9ABA900W_ _
P2Z9ACA900W_ _
2200
1600
3000
2200
1400
3000
2000
1600
2500
2500
2500
2500
2500
3000
2500
2500
0.92
0.92
0.92
0.92
0.92
1.70
1.50
1.50
1.00
1.00
1.00
1.00
1.00
1.15
1.15
1.15
2200
1600
3000
2200
1400
3000
2000
1600
2300
1700
3100
2300
1500
3100
2100
1700
2300
1700
3100
2300
1500
3100
2100
1700
300
300
300
300
300
300
300
300
150
150
150
150
150
200
200
200
600
600
600
600
600
600
600
600
30
30
35
35
35
150
75
75
30
30
35
35
35
150
75
75
9
10
9
12
15
15
17
25
9
10
9
12
15
15
17
25
150
150
200
200
200
400
250
150
—
—
—
—
—
—
—
—
3
3
3
3
3
3
3
3
Full Control SCR/SCR
P3Z7ABT700W_ _
P3Z7ACT700W_ _
P3Z7AAT800W_ _
P3Z7ABT800W_ _
P3Z7ACT800W_ _
P3Z9AAT900W_ _
P3Z9ABT900W_ _
P3Z9ACT900W_ _
P7Z7ABB700W_ _
P7Z7ABC700W_ _
P7Z9AAA900W_ _
P7Z9AAB900W_ _
P7Z9AAC900W_ _
2200
1600
3000
2000
1600
2500
2500
3000
2500
2500
0.92
0.92
1.70
1.50
1.50
1.00
1.00
1.15
1.15
1.15
0.70
0.70
1.00
1.00
1.00
0.70
0.70
1.00
1.00
1.00
0.70
0.70
0.70
0.70
0.70
1.00
1.00
1.00
0.70
0.70
1.00
1.00
1.00
2200
1600
3000
2000
1600
2300
1700
3100
2100
1700
2300
1700
3100
2100
1700
300
300
300
300
300
150
150
200
200
200
600
600
600
600
600
30
30
150
75
75
30
30
150
75
75
9
14
16
16
16
9
10
15
17
25
150
150
400
250
150
10
8
20
20
20
3
3
3
3
3
Half Control Rectifier/SCR
Applies for zero or negative gate bias.
Higher dv/dt ratings available, consult factory.
With recommended gate drive.
Per JEDEC standard RS-397, 5.2.2.6.
Per JEDEC RS-397, 5.2.2.1.
Bottom side cooled.
Consult recommended mounting procedures.
Designs are available for “Current Source Inverter”
applications, consult factory.
Reflects substantial derating necessary with single
0.08°C/W or 0.10°C/W sink.
Element location indicated by E1 or E2.
Hi-Pot. 60Hz, 1 min. test
*
**
K
1
/A
1
K
/A
2
(In.)
相關PDF資料
PDF描述
P1Z7AAR700W Phase Control Modules (345-800 Amperes/400-3000 Volts)
P2000M Standard silicon rectifier diodes
P2000A Standard silicon rectifier diodes
P2000B Standard silicon rectifier diodes
P2000D Standard silicon rectifier diodes
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