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參數(shù)資料
| 型號： | P16NE |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET |
| 中文描述： | ? -溝道增強模式單一的功能規(guī)格]功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 70K |
| 代理商： | P16NE |
STP16NE06L
STP16NE06L/FP
N - CHANNEL ENHANCEMENT MODE
SINGLE FEATURE SIZE
POWER MOSFET
TARGET DATA
I
TYPICAL R
DS(on)
= 0.09
I
AVALANCHERUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
175
o
C OPERATING TEMPERATURE
I
HIGH dV/dt CAPABILITY
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturingreproducibility.
APPLICATIONS
I
DC MOTOR CONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP16NE06L
STP16NE06LFP
60
60
±
15
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
V
V
V
A
A
A
W
16
10
64
60
0.4
11
7
64
30
0.2
2000
W/
o
C
V
V/ns
o
C
o
C
V
ISO
dV/dt
T
stg
T
j
6
-65 to 175
175
(
1
) I
SD
≤
16 A,di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.12
< 0.12
I
D
STP16NE06L
STP16NE06LFP
60 V
60 V
16 A
11 A
October 1997
TO-220
TO-220FP
1
2
3
1
2
3
1/7
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