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參數(shù)資料
| 型號： | P12NB30FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| 中文描述： | ? -通道增強型MOSFET的PowerMESH |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 56K |
| 代理商： | P12NB30FP |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 150 V
R
G
= 4.7
I
D
= 6 A
V
GS
= 10 V
20
10
28
14
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=240 V
I
D
=12A V
GS
= 10 V
29
11
12
40
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 240 V
R
G
= 4.7
I
D
=12 A
V
GS
= 10 V
10
10
20
14
14
28
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
12
48
A
A
V
SD
(
)
I
SD
= 12 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 12 A
V
DD
= 100 V
di/dt = 100 A/
μ
s
T
j
= 150
C
250
2
16
ns
μ
C
A
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Pulse widthlimited by safe operating area
STP12NB30/FP
3/6
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