參數(shù)資料
型號: P01N02LMB
廠商: Electronic Theatre Controls, Inc.
英文描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述: N溝道增強模式的邏輯電平場效應(yīng)晶體管
文件頁數(shù): 2/3頁
文件大?。?/td> 45K
代理商: P01N02LMB
2
AUG-18-2001
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P01N02LMB
SOT-23 (M3)
NIKO-SEM
DYNAMIC
Input Capacitance
C
iss
120
Output Capacitance
C
oss
100
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
C
rss
V
GS
= 0V, V
DS
= 15V, f = 1MHz
85
pF
Q
g
11
Q
gs
3.0
Q
gd
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 1A
5.8
nC
t
d(on)
7
t
r
V
DS
= 15V, R
L
= 1
Ω
20
Turn-Off Delay Time
2
t
d(off)
I
D
1A, V
GS
= 10V, R
GS
= 50
Ω
13
Fall Time
2
t
f
19
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
Continuous Current
Pulsed Current
3
Forward Voltage
1
I
S
1.2
I
SM
12
A
V
SD
I
F
= I
S
, V
GS
= 0V
1.3
V
Reverse Recovery Time
t
rr
70
nS
Reverse Recovery Charge
Q
rr
I
F
= I
S
, dl
F
/dt = 100A /
μ
S
0.22
μ
C
1
Pulse test : Pulse Width
300
μ
sec, Duty Cycle
2
.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “102B”
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