參數(shù)資料
型號(hào)： P0115DA1AA3
英文描述： MCU CMOS 44 LD 20MHZ 4K EPRM, -40C to +125C, 44-TQFP, TRAY
中文描述： 晶閘管0.8A 400V
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 68K
代理商： P0115DA1AA3
P
G (AV)
= 0.1W P
GM
= 2 W (tp = 20
μ
s)
I
GM
=1 A (tp = 20
μ
s)
GATE CHARACTERISTICS
(maximumvalues)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junctionto ambient
150
°
C/W
Rth(j-l)
Junctionto leads for DC
80
°
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Sensitivity
Unit
02
09
11
15
18
I
GT
V
D
=12V (DC) R
L
=140
Tj= 25
°
C
MIN
4
15
0.5
μ
A
MAX
200
1
25
50
5
V
GT
V
D
=12V (DC) R
L
=140
Tj= 25
°
C
MAX
0.8
V
V
GD
V
D
=V
DRM
R
L
=3.3k
R
GK
= 1K
Tj= 125
°
C
MIN
0.1
V
V
RGM
I
RG
=10
μ
A
Tj= 25
°
C
MIN
8
V
tgd
V
D
=V
DRM
dI
G
/dt = 0.1A/
μ
s
I
TM
= 3 x I
T(AV
)
I
G
= 10mA
Tj= 25
°
C
TYP
0.5
μ
s
I
H
I
T
= 50mA R
GK
= 1 K
Tj= 25
°
C
MAX
5
mA
I
L
I
G
=1mA R
GK
= 1K
Tj= 25
°
C
MAX
6
mA
V
TM
I
TM
= 1.6A tp= 380
μ
s
Tj= 25
°
C
MAX
1.93
V
I
DRM
I
RRM
V
D
=V
DRM
R
GK
= 1K
V
R
=V
RRM
Tj= 25
°
C
MAX
1
μ
A
Tj= 125
°
C
MAX
100
μ
A
dV/dt
V
D
=67%V
DRM
R
GK
=1 K
Tj= 125
°
C
MIN
25
25
50
100
30
V/
μ
s
tq
I
TM
= 3 x I
T(AV
) V
R
=35V
dI/dt=10A/
μ
s
dV/dt=10V/
μ
s
V
D
= 67%V
DRM
R
GK
=1 K
tp=100
μ
s
Tj= 125
°
C
MAX
200
μ
s
ELECTRICALCHARACTERISTICS
ORDERING INFORMATION
P
01
02
A
A
SCR PLANAR
CURRENT
PACKAGES:
A = TO92 B = RD26
VOLTAGE
SENSITIVITY
P01xxxA/B
2/5
相關(guān)PDF資料
PDF描述
P0102AA1AA3 MCU CMOS 40 LD 4MHZ 4K EPRM, 0C to +70C, 40-PDIP, TUBE
P0144 ＂SMT Toroidal Inductors (Shielded) - One Winding: Low Profile - ＂＂Bobcat＂＂＂
P0145 ＂SMT Toroidal Inductors (Shielded) - One Winding: Low Profile - ＂＂Bobcat＂＂＂
P0146 ＂SMT Toroidal Inductors (Shielded) - One Winding: Low Profile - ＂＂Bobcat＂＂＂
P0147 ＂SMT Toroidal Inductors (Shielded) - One Winding: Low Profile - ＂＂Bobcat＂＂＂
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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