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參數(shù)資料
| 型號： | OQ2538U |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 數(shù)字傳輸電路 |
| 英文描述： | SDH/SONET STM16/OC48 main amplifiers |
| 中文描述： | ATM/SONET/SDH SUPPORT CIRCUIT, UUC36 |
| 封裝： | DIE-36 |
| 文件頁數(shù)： | 20/24頁 |
| 文件大小： | 167K |
| 代理商： | OQ2538U |
1998 Oct 14
20
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 main amplifiers
OQ2538HP; OQ2538U
Table 1
Bonding pad locations. All x/y coordinates
represent the position of the centre of the pad
with respect to the centre of the die (see
Fig.16).
SYMBOL
PAD
COORDINATES
x
y
GND
V
EE
V
EE
GND
GND
LOSDC
LOS
GND
REF
CAPA
V
EE
V
EE
GND
GND
OUTQ
GND
OUT
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
900
900
700
500
300
100
+100
+300
+500
+700
+900
+900
+900
+900
+900
+900
+900
+900
700
900
900
900
900
900
900
900
900
900
900
700
500
300
100
+100
+300
+500
GND
n.c.
GND
n.c.
GND
GND
AGCDC
COFFQ
COFF
V
EE
V
EE
AGC
GND
GND
INQ
GND
IN
GND
19
20
21
22
23
24
25
26
27
28
29
30
31
33
34
35
36
+900
+900
+700
+500
+300
+100
100
300
500
700
900
900
900
900
900
900
900
900
+700
+900
+900
+900
+900
+900
+900
+900
+900
+900
+900
+700
+500
+300
+100
100
300
500
SYMBOL
PAD
COORDINATES
x
y
Table 2
Physical characteristics of bare die
PARAMETER
VALUE
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attache temperature
Attache time
0.8
μ
m silicon nitride on top of 0.9
μ
m PSG (PhosphoSilicate Glass)
minimum dimension of exposed metallization is 90
×
90
μ
m (pad size = 100
×
100
μ
m)
1.8
μ
m AlCu (1% Cu)
380
μ
m nominal
2.070
×
2.070 mm (4.285 mm
2
)
silicon; electrically connected to V
EE
potential through substrate contacts
<440
°
C; recommended die attache is glue
<15 s
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