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參數資料
| 型號： | OPT202 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | Photodiode With On-Chip Amplifier(帶片內放大器的光電二極管) |
| 中文描述： | 光電二極管帶有片上放大器（帶片內放大器的光電二極管） |
| 文件頁數： | 8/9頁 |
| 文件大?。?/td> | 167K |
| 代理商： | OPT202 |
OPT202
8
DARK ERRORS
The dark errors in the specification table include all sources.
The dominant error source is the input offset voltage of the
op amp. Photodiode dark current and input bias current of
the op amp are in the 2pA range and contribute virtually no
offset error at room temperature. Dark current and input bias
current double for each 10
°
C above 25
°
C. At 70
°
C, the error
current can be approximately 100pA. This would produce a
1mV offset with R
F
= 10M
. The OPT202 is useful with
feedback resistors of 100M
or greater at room temperature.
The dark output voltage can be trimmed to zero with the
optional circuit shown in Figure 3.
When used with very large feedback resistors, tiny leakage
currents on the circuit board can degrade the performance of
the OPT202. Careful circuit board design and clean assembly
procedures will help achieve best performance. A “guard
ring” on the circuit board can help minimize leakage to the
critical non-inverting input (pin 2). This guard ring should
encircle pin 2 and connect to Common, pin 8.
simple R/C circuit with a –3dB cutoff frequency of 50kHz.
This yields a rise time of approximately 10
μ
s (10% to 90%).
Dynamic response is not limited by op amp slew rate. This
is demonstrated by the dynamic response oscilloscope
photographs showing virtually identical large-signal and
small-signal response.
Dynamic response will vary with feedback resistor value as
shown in the typical performance curve “Voltage Output
Responsivity vs Frequency.” Rise time (10% to 90%) will
vary according to the –3dB bandwidth produced by a given
feedback resistor value—
t
R
≈
0.35
where:
t
R
is the rise time (10% to 90%)
f
C
is the –3dB bandwidth
NOISE PERFORMANCE
Noise performance of the OPT202 is determined by the op
amp characteristics in conjunction with the feedback
components and photodiode capacitance. The typical
performance curve “Output Noise Voltage vs Measurement
Bandwidth” shows how the noise varies with R
F
and measured
bandwidth (1Hz to the indicated frequency). The signal
bandwidth of the OPT202 is indicated on the curves. Noise
can be reduced by filtering the output with a cutoff frequency
equal to the signal bandwidth.
Output noise increases in proportion to the square-root of the
feedback resistance, while responsivity increases linearly
with feedback resistance. So best signal-to-noise ratio is
achieved with large feedback resistance. This comes with
the trade-off of decreased bandwidth.
The noise performance of a photodetector is sometimes
characterized by Noise Effective Power (NEP). This is the
radiant power which would produce an output signal equal
to the noise level. NEP has the units of radiant power
(watts). The typical performance curve “Noise Effective
Power vs Measurement Bandwidth” shows how NEP varies
with R
F
and measurement bandwidth.
FIGURE 4. Responsivity (Gain) Adjustment Circuit.
FIGURE 3. Dark Error (Offset) Adjustment Circuit.
LINEARITY PERFORMANCE
Current output of the photodiode is very linear with radiant
power throughout a wide range. Nonlinearity remains below
approximately 0.01% up to 100
μ
A photodiode current. The
photodiode can produce output currents of 10mA or greater
with high radiant power, but nonlinearity increases to several
percent in this region.
This very linear performance at high radiant power assumes
that the full photodiode area is uniformly illuminated. If the
light source is focused to a small area of the photodiode,
nonlinearity will occur at lower radiant power.
DYNAMIC RESPONSE
Using the internal 1M
resistor, the dynamic response of
the photodiode/op amp combination can be modeled as a
f
C
(1)
1M
OPT202
3pF
175
V
O
V–
λ
V+
0.01μF
500
V+
V–
100μA
1/2 REF200
100
100
100μA
1/2 REF200
Adjust dark output for 0V.
Trim Range: ±7mV
1M
OPT202
3pF
175
V
O
V–
λ
V+
10k
5k
Gain Adjustment
+50%; –0%
R
F
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