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參數(shù)資料
| 型號： | OPB750T |
| 廠商： | Optek Technology |
| 英文描述： | Reflective Object Sensor Type OPB750T |
| 中文描述： | 反射對象傳感器類型OPB750T |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 448K |
| 代理商： | OPB750T |
Fea ures
High contrast ratio, 1000 to 1
minimum
Printed circuit board mount
Low cost plastic housing
De scrip ion
The OPB750T reflective assembly
features a phototransistor output
designed to decrease low-level light gain
while not affecting the high-level light
gain. Available without mounting tabs as
OPB750N.
Available with 12", 26 AWG wire leads as
OPB750/OPB755 series. Photologic
output sensors available in
OPB760/OPB770 series.
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Stor age and Op er at ng Tem pera ure Range . . . . . . . . . . . . . . . . . . . -40
o
C to +85
o
C
Lead Sol der ng Tem pera ure [1/16 inch (1.6 mm) from case for 5 sec. with sol der ng
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
o
C
(2)
In put Di ode
For ward DC Cur ent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak For ward Cur ent (1
μ
s pulse width, 300 pps). . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Re verse DC Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(1)
Out put Pho o ran sis or
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Col ec or DC Cur ent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(1)
Notes:
(1) Derate Linearly 1.67 mW/
o
C above 25
o
C.
(2) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
(3) All parameters tested using pulse technique.
(4) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in
chlorinated hydrocarbons and ketones.
(5) Photocurrent is measured using an Eastman Kodak Neutral White test card having a 90%
diffuse reflectance as a reflecting surface . Reference: Eastman Kodak, Catalog #1257795.
(6) I
C(OFF)
is the photocurrent measured with current to the input diode and a 5% reflecting
surface.
Prod uct Bul e in OPB750T
June 1996
Re lec ive Ob ect Sen sor
Type OPB750T
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
11-44
相關PDF資料 |
PDF描述 |
|---|---|
| OPB755T | Reflective Object Sensor |
| OPB760N | Photologic Reflective Object Sensors |
| OPB761N | Photologic Reflective Object Sensors |
| OPB762N | Photologic Reflective Object Sensors |
| OPB763N | Photologic Reflective Object Sensors |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| OPB750T_06 | 制造商:OPTEK 制造商全稱:OPTEK 功能描述:Reflective Object Sensor |
| OPB755N | 功能描述:光學開關（反射型，光電晶體管輸出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感應距離:1 mm 輸出設備:Phototransistor 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電壓:1.2 V 反向電壓:5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 安裝風格:SMD/SMT 封裝:Reel |
| OPB755NZ | 功能描述:光學開關（反射型，光電晶體管輸出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感應距離:1 mm 輸出設備:Phototransistor 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電壓:1.2 V 反向電壓:5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 安裝風格:SMD/SMT 封裝:Reel |
| OPB755T | 功能描述:光學開關（反射型，光電晶體管輸出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感應距離:1 mm 輸出設備:Phototransistor 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電壓:1.2 V 反向電壓:5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 安裝風格:SMD/SMT 封裝:Reel |
| OPB755T_06 | 制造商:OPTEK 制造商全稱:OPTEK 功能描述:Reflective Object Sensor |
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