
OPA847
SBOS251C
2
www.ti.com
PIN CONFIGURATIONS
Top View
SO
ABSOLUTE MAXIMUM RATINGS
(1)
Power Supply ............................................................................... ±6.5V
DC
Internal Power Dissipation........................ See Thermal Analysis Section
Differential Input Voltage ..................................................................±1.2V
Input Voltage Range............................................................................ ±V
S
Storage Temperature Range: D, DBV .......................... –40°C to +125°C
Lead Temperature (soldering, 10s) .............................................. +300°C
Junction Temperature (T
)............................................................ +150°C
ESD Rating (Human Body Model) ..................................................1500V
(Charge Device Model) ...............................................1500V
(Machine Model) ...........................................................100V
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
PACKAGE/ORDERING INFORMATION
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
DESIGNATOR
(1)
PACKAGE
MARKING
ORDERING
NUMBER
TRANSPORT
MEDIA, QUANTITY
PRODUCT
PACKAGE-LEAD
OPA847
SO-8
"
SOT23-6
"
D
"
–40°C to +85°C
"
–40°C to +85°C
"
OPA847
"
OATI
"
OPA847ID
OPA847IDR
OPA847IDBVT
OPA847IDBVR
Rails, 100
"
Tape and Reel, 2500
Tape and Reel, 250
Tape and Reel, 3000
OPA847
DBV
"
"
NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com.
Top View
SOT
1
2
3
4
8
7
6
5
NC
Inverting Input
Noninverting Input
–V
S
DIS
+V
S
Output
NC
NC = No Connection
1
2
3
6
4
+V
S
Inverting Input
Output
–V
S
5
DIS
Noninverting Input
OATI
1
2
3
6
5
4
Pin Orientation/Package Marking
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from
performance degradation to complete device failure. Texas
Instruments recommends that all integrated circuits be handled
and stored using appropriate ESD protection methods.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.